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BRA123ETP

PNP Built-in Resistor Transistor TO-92 Series Inverter, Driver, Switching

Features ?Built–inResistorType ?SimplifiesCircuitDesign ?ReducesBoardSpace ?ComplementarypairwithBRC144ETPseries

HitachiHitachi Semiconductor

日立日立公司

BRC123ECM

NPNBuilt-inResistorTransistorCMPAKSeriesInverter,Driver,Switching

HitachiHitachi Semiconductor

日立日立公司

BS123

DMOSTransistors(N-Channel)

FEATURES ?Highinputimpedance ?Lowgatethresholdvoltage ?Lowdrain-sourceONresistance ?High-speedswitching ?Nominoritycarrierstoragetime ?CMOSlogiccompatibleinput ?Nothermalrunaway ?Nosecondarybreakdown

GE

GE Industrial Company

BSP123

SIPMOSSmall-SignalTransistor(NchannelEnhancementmodeLogicLevel)

?Nchannel ?Enhancementmode ?LogicLevel ?VGS(th)=0.8...2.0V

SIEMENSSiemens Ltd

西門子德國西門子股份公司

BSP123

SIPMOSSmall-Signal-Transistor

Feature ?N-Channel ?Enhancementmode ?LogicLevel ?dv/dtrated ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoAECQ101

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSP123

SIPMOSSmall-Signal-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSS123

N-channelenhancementmodeverticalD-MOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effecttransistorinaplasticenvelopeusing’trench’technology. TheBSS123issuppliedintheSOT23subminiaturesurfacemountingpackage. FEATURES ?’Trench’technology ?Extremelyfastswitching ?Logiclevelcompatible ?Subminiatur

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BSS123

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

SOT23N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

Zetex

Zetex Semiconductors

BSS123

SIPMOSSmall-SignalTransistor(NchannelEnhancementmodeLogicLevel)

SIPMOS?Small-SignalTransistor ?Nchannel ?Enhancementmode ?LogicLevel ?VGS(th)=0.8...2.0V

SIEMENSSiemens Ltd

西門子德國西門子股份公司

BSS123

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingpe

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BSS123

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingDIODESproprietary,highdensity,usesadvancedtrenchtechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperform

DIODES

Diodes Incorporated

BSS123

SIPMOSSmall-Signal-Transistor

SIPMOS?Small-Signal-Transistor Feature ?N-Channel ?Enhancementmode ?LogicLevel ?dv/dtrated ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoAECQ101

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSS123

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingpe

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BSS123

PowerMOSFETN-Channel

Features: *LowOn-Resistance:6.0Ω *LowInputCapacitance:20PF *LowOutputCapacitance:9PF *LowThreshole:2.8V *FastSwitchingSpeed:20ns Application: *DCtoDCConverter *Cellular&PCMCIACard *CordlessTelephone *PowerManagementinPortableandBatteryetc.

WEITRON

Weitron Technology

BSS123

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

BSS123

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

BSS123

SIPMOSSmall-Signal-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSS123

N-ChannelEnhancementModeFieldEffectTransistor

Features ?HighDenseCellDesignforExtremelyLowRDS(ON) ?VoltageControlledSmallSignalSwitch ?SurfaceMountPackage ?EpoxyMeetsUL94V-0FlammabilityRating ?MoistureSensitivityLevel1 ?HalogenFreeAvailableUponRequestByAddingSuffix-HF ?LeadFreeFinish/RoHSComplian

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

BSS123

N-CHANNELMOSFETinaSOT-23PlasticPackage

Descriptions N-CHANNELMOSFETinaSOT-23PlasticPackage. Features HighdensitycelldesignforextremelylowRDS(ON). Applications ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

BSS123

N-CHANNELENHANCEMENTMODEMOSFET

Description TheseN-Channelenhancementmodefieldeffecttransistorsusesadvancedtrenchtechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Theseproductsareparticularlysuitedforlowvoltage,lowcurr

BWTECH

Bruckewell Technology LTD

詳細(xì)參數(shù)

  • 型號：

    BRA123ETP

  • 制造商：

    HITACHI

  • 制造商全稱：

    Hitachi Semiconductor

  • 功能描述：

    PNP Built-in Resistor Transistor TO?92 Series Inverter, Driver, Switching

供應(yīng)商型號品牌批號封裝庫存備注價格
HITACHI/日立
2022+
3000
全新原裝 貨期兩周
 詢價
未知
23+
BR-4
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
HITACHI
ROHS
56520
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
HITACHI
16+
SOT-23
2700
原裝現(xiàn)貨假一罰十
 詢價
RENESAS瑞薩/HITACHI日立
24+
SOT-23
8900
新進(jìn)庫存/原裝
 詢價
HIT/RENESAS
04+
TO23-5
50
原裝現(xiàn)貨海量庫存歡迎咨詢
 詢價
HIT/RENESAS
22+23+
TO23-5
10279
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價
HIT/RENESAS
22+
TO23-5
9600
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實(shí)單!
 詢價
HIT/RENESAS
22+
TO23-5
6550
原裝 低價 支持實(shí)單
 詢價
HIT/RENESAS
2023+
8700
原裝現(xiàn)貨
 詢價
更多BRA123ETP供應(yīng)商 更新時間2024-11-8 9:50:00

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