零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
ULTRA-FASTRECOVERY4to6AMPERESSINGLE-PHASE,FULL-WAVEBRIDGESHEATSINKCHASSISPCBOARDMOUNTING | edi Electronic devices inc. | edi | ||
MiniPROFET(High-sideswitchShort-circuitprotectionInputprotectionOvertemperatureprotectionwithhysteresis) MiniPROFET ?High-sideswitch ?Short-circuitprotection ?Inputprotection ?Overtemperatureprotectionwithhysteresis ?Overloadprotection ?Overvoltageprotection ?Switchinginductiveload ?Clampofnegativeoutputvoltagewithinductiveloads ?Undervoltageshutd | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
MiniPROFET(High-sideswitchShort-circuitprotectionInputprotectionOvertemperatureprotectionwithhysteresis) MiniPROFET ?High-sideswitch ?Short-circuitprotection ?Inputprotection ?Overtemperatureprotectionwithhysteresis ?Overloadprotection ?Overvoltageprotection ?Switchinginductiveload ?Clampofnegativeoutputvoltagewithinductiveloads ?Undervoltageshutd | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SmartHighsideHighCurrentPowerSwitch | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SmartHighsideHighCurrentPowerSwitch(OverloadprotectionCurrentlimitationShortcircuitprotectionOvertemperatureprotection) GeneralDescription NchannelverticalpowerFETwithchargepump,currentcontrolledinputanddiagnosticfeedbackwithloadcurrentsense,integratedinSmartSIPMOS?chiponchiptechnology.Fullyprotectedbyembeddedprotectionfunctions. Features ?Overloadprotection ?Currentl | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
SmartHighsideHighCurrentPowerSwitch GeneralDescription NchannelverticalpowerFETwithchargepump,currentcontrolledinputanddiagnosticfeedbackwithloadcurrentsense,integratedinSmartSIPMOS?chiponchiptechnology.Providingembeddedprotectivefunctions. Features ?Overloadprotection ?Currentlimitation | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SILICONRECTIFIERDIODES FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop | EIC EIC discrete Semiconductors | EIC | ||
SiliconRectifiers SiliconRectifiers ?Nominalcurrent?Nennstrom5A ?Repetitivepeakreversevoltage50...1000V ?Plasticcase?5.4x7.5[mm] ?Weightapprox.?Gewichtca.1.4g ?PlasticmaterialhasULclassification94V-0 ?Standardpackagingtapedinammopackseepage16 | Diotec Diotec Semiconductor | Diotec | ||
5.0AMP.SILICONRECTIFIERS FEATURES: *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability | JGDJinan Gude Electronic Device 濟南固锝電子濟南固锝電子器件有限公司 | JGD | ||
Siliconplanarzenerdiodes
| ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
250WATTS(AC)DC/DCSINGLEOUTPUT 250WATTS(AC)DC/DCSINGLEOUTPUT Features ?SingleOutput ?3Ux21(24)TEx166.5mm(24TEfor5Voutputs) ?Weight1.7kg | POWERBOX Powerbox manufactures | POWERBOX | ||
SMDSchottkyBarrierRectifiers | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDSchottkyBarrierRectifiers | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,33A,RDS(ON)=40mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,36A,RDS(ON)=53mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,27A,RDS(ON)=40mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,36A,RDS(ON)=53mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,33A,RDS(ON)=40mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,36A,RDS(ON)=53mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,27A,RDS(ON)=40mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS |
詳細參數(shù)
- 型號:
BR550GI
- 制造商:
American Power Conversion Corp(APC by Schneider Electric)
- 功能描述:
APC Power-Saving Back-UPS Pro 550, 230V, 7.48H x 3.58W x 12.20D in., 14.37lbs,BK
- 功能描述:
APC POWER-SAVING BACK-UPS PRO
- 制造商:
Schneider Electric
- 功能描述:
APC POWER-SAVING BACK-UPS PRO 550 - Bulk
- 制造商:
American Power Conversion Corp.
- 功能描述:
Bulk
- 功能描述:
330W 550 VA UPS Battery Backup with Two Power Save Outlets
- 功能描述:
550VA UPS APC
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
AmericanPowerConversion( |
新 |
14 |
全新原裝 貨期兩周 |
詢價 | |||
American Power Conversion (APC |
2022+ |
10 |
全新原裝 貨期兩周 |
詢價 | |||
ST |
23+ |
原廠原封 |
16900 |
正規(guī)渠道,只有原裝! |
詢價 | ||
STANLEY |
6000 |
詢價 | |||||
ST |
22+ |
原廠原封 |
16900 |
支持樣品 原裝現(xiàn)貨 提供技術支持! |
詢價 | ||
STANLEY |
660 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | ||||
STANLEY |
24+ |
35200 |
一級代理/放心采購 |
詢價 | |||
AmphenolAdvancedSensors |
24+ |
SMD |
17900 |
NTC熱敏電阻DIA55milsADJLEADW/STUBENDGLASSCOAT |
詢價 | ||
24+ |
N/A |
58000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
ORIG |
23+ |
orig |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 |
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