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BRS102

SINGLE-PHASEBRIDGERECTIFIER

MICMIC GROUP RECTIFIERS

昌福電子昌福電子有限公司

BSH102

N-channelenhancementmodeMOStransistor

DESCRIPTION N-channelenhancementmodeMOStransistorinaSOT2SMDpackage. FEATURES ?Verylowthreshold ?High-speedswitching ?Nosecondarybreakdown ?DirectinterfacetoC-MOS,TTLetc. APPLICATIONS ?Powermanagement ?DCtoDCconverters ?Batterypoweredapplications ?‘Glue-l

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BT102

DC/DCConverters

ETCList of Unclassifed Manufacturers

未分類制造商

BT102

BatteryCapacityTester

ACmilliohmmeterchecksBatteryConditioninsecondsWhilethebatteryisinservice Features: ?On-linetestingwithoutdisconnectingbattery ?Built-indataloggerstoresupto999tests ?SimultaneouslymeasuresDCVoltageandACMilliohms ?Autopoweroff ?IncludesWindows?95/98/NT

EXTECH

Extech Instruments Corporation.

BU102

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3package ·VCEO(sus)=150V(min) APPLICATIONS ·DesignedforhorizontaldeflectionoutputstageofCTVreceivers

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BU102

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3package ·VCEO(sus)=150V(min) APPLICATIONS ·DesignedforhorizontaldeflectionoutputstageofCTVreceivers

SAVANTIC

Savantic, Inc.

BU102

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

BU102

BipolarJunctionTransistor

FEATURES ●Highvoltagecapability ●Featuresofgoodhightemperature ●Highswitchingspeed APPLICATION FluorescentLamp、ElectronicBallast、 ChargerandSwitch-modepowersupplies

JINGDAOShenzhen Jingdao Electronic Co.,Ltd

晶導(dǎo)深圳市晶導(dǎo)電子有限公司

BU-102BK

LargeInsulatedKelvinBatteryClip

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

BU102D

BipolarJunctionTransistor

FEATURES ●Highvoltagecapability ●Intergratedantiparallelcollector-emitterdiode ●Featuresofgoodhightemperature ●Highswitchingspeed APPLICATION FluorescentLampand Switch-modepowersupplies

JINGDAOShenzhen Jingdao Electronic Co.,Ltd

晶導(dǎo)深圳市晶導(dǎo)電子有限公司

BU102S

BipolarJunctionTransistor

FEATURES ●Highvoltagecapability ●Featuresofgoodhightemperature ●Highswitchingspeed APPLICATION FluorescentLamp、Charger andSwitch-modepowersupplies

JINGDAOShenzhen Jingdao Electronic Co.,Ltd

晶導(dǎo)深圳市晶導(dǎo)電子有限公司

BUZ102

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rateddv/dtrated)

?Nchannel ?Enhancementmode ?Avalanche-rated ?dv/dtrated ?Lowon-resistance ?175°Coperatingtemperature ?alsoinTO-220SMDavailable

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BUZ102

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=42A@TC=25℃ ·DrainSourceVoltage :VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.023Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BUZ102AL

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-ratedLogicLeveldv/dtrated)

?Nchannel ?Enhancementmode ?Avalanche-rated ?LogicLevel ?dv/dtrated ?Lowon-resistance ?175°Coperatingtemperature ?alsoinTO-220SMDavailable

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BUZ102S

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rateddv/dtrated)

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BUZ102S

SIPMOSPowerTransistor

Features ?Nchannel ?Enhancementmode ?Avalancherated ?dv/dtrated ?175?Coperatingtemperature

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BUZ102SL

SIPMOSPowerTransistor(NchannelEnhancementmodeLogicLevelAvalanche-rateddv/dtrated)

?Nchannel ?Enhancementmode ?LogicLevel ?Avalanche-rated ?dv/dtrated ?175°Coperatingtemperature ?alsoinSMDavailable

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BYP102

FREDDiode(FastrecoveryepitaxialdiodeSoftrecoverycharacteristics)

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BYP102

FREDDiode

FEATURES ·LowSwitchingLosses ·LowLeakageCurrent ·Ultrafastrecoverytime APPLICATIONS ·PFC ·Half-bridge/full-bridgeswitched-modepowersupplies ·Half-bridgelightingballasts

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BYX102G

High-voltagesoft-recoverycontrolledavalancherectifiers

DESCRIPTION Ruggedglasspackage,usingahightemperaturealloyedconstruction. Thispackageishermeticallysealedandfatiguefreeascoefficientsofexpansionofallusedpartsarematched.Thepackageisdesignedtobeusedinaninsulatingmediumsuchasresin,oilorSF6gas. FEA

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

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BB
23+
鐵帽
30000
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BB
21+
鐵帽
8
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BB
23+
鐵帽
8
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SUNMATE(森美特)
2019+ROHS
BR-10
66688
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BYTES
23+
NA
19960
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RECTRON
10
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GeneSiC
1935+
N/A
55
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GENESIC
1809+
BR-10
3675
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GeneSiC
22+
NA
55
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GeneSiC Semiconductor
22+
BR10
9000
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更多BR-102T供應(yīng)商 更新時(shí)間2025-1-13 16:55:00