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BPR550J

3W to 50W PLANAR SHOCK / VIBRATION PROOF HIGH POWER RESISTORS

Features………………………………………………………… ?Non-Inductiveplanarpackage ?Highpowerdensity. ?ThinpackageforhighdensityPCBinstallation. ?Powerdissipatedabovetheboard. ?RoHScompliant. ?Superiorvibrationdurability Applications……………………………………………………… ?Idealforextrememechanicallyst

BITECH

瑞谷拜特上海瑞谷拜特軟件技術有限公司

BRUS550

ULTRA-FASTRECOVERY4to6AMPERESSINGLE-PHASE,FULL-WAVEBRIDGESHEATSINKCHASSISPCBOARDMOUNTING

edi

Electronic devices inc.

BSP550

MiniPROFET(High-sideswitchShort-circuitprotectionInputprotectionOvertemperatureprotectionwithhysteresis)

MiniPROFET ?High-sideswitch ?Short-circuitprotection ?Inputprotection ?Overtemperatureprotectionwithhysteresis ?Overloadprotection ?Overvoltageprotection ?Switchinginductiveload ?Clampofnegativeoutputvoltagewithinductiveloads ?Undervoltageshutd

SIEMENSSiemens Ltd

西門子德國西門子股份公司

BSP550

MiniPROFET(High-sideswitchShort-circuitprotectionInputprotectionOvertemperatureprotectionwithhysteresis)

MiniPROFET ?High-sideswitch ?Short-circuitprotection ?Inputprotection ?Overtemperatureprotectionwithhysteresis ?Overloadprotection ?Overvoltageprotection ?Switchinginductiveload ?Clampofnegativeoutputvoltagewithinductiveloads ?Undervoltageshutd

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BTS550

SmartHighsideHighCurrentPowerSwitch

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BTS550P

SmartHighsideHighCurrentPowerSwitch(OverloadprotectionCurrentlimitationShortcircuitprotectionOvertemperatureprotection)

GeneralDescription NchannelverticalpowerFETwithchargepump,currentcontrolledinputanddiagnosticfeedbackwithloadcurrentsense,integratedinSmartSIPMOS?chiponchiptechnology.Fullyprotectedbyembeddedprotectionfunctions. Features ?Overloadprotection ?Currentl

SIEMENSSiemens Ltd

西門子德國西門子股份公司

BTS550P

SmartHighsideHighCurrentPowerSwitch

GeneralDescription NchannelverticalpowerFETwithchargepump,currentcontrolledinputanddiagnosticfeedbackwithloadcurrentsense,integratedinSmartSIPMOS?chiponchiptechnology.Providingembeddedprotectivefunctions. Features ?Overloadprotection ?Currentlimitation

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BY550

SILICONRECTIFIERDIODES

FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop

EIC

EIC discrete Semiconductors

BY550

SiliconRectifiers

SiliconRectifiers ?Nominalcurrent?Nennstrom5A ?Repetitivepeakreversevoltage50...1000V ?Plasticcase?5.4x7.5[mm] ?Weightapprox.?Gewichtca.1.4g ?PlasticmaterialhasULclassification94V-0 ?Standardpackagingtapedinammopackseepage16

Diotec

Diotec Semiconductor

BY550

5.0AMP.SILICONRECTIFIERS

FEATURES: *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability

JGDJinan Gude Electronic Device

濟南固锝電子濟南固锝電子器件有限公司

BZX550

Siliconplanarzenerdiodes

ETCList of Unclassifed Manufacturers

未分類制造商

C550

250WATTS(AC)DC/DCSINGLEOUTPUT

250WATTS(AC)DC/DCSINGLEOUTPUT Features ?SingleOutput ?3Ux21(24)TEx166.5mm(24TEfor5Voutputs) ?Weight1.7kg

POWERBOX

Powerbox manufactures

CDBB550-G

SMDSchottkyBarrierRectifiers

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CDBB550-HF

SMDSchottkyBarrierRectifiers

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CEB550

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,33A,RDS(ON)=40mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB550A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,36A,RDS(ON)=53mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED550

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,27A,RDS(ON)=40mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF550A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,36A,RDS(ON)=53mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP550

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,33A,RDS(ON)=40mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP550A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,36A,RDS(ON)=53mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細參數(shù)

  • 型號：

    BPR550J

  • 制造商：

    BITECH

  • 制造商全稱：

    Bi technologies

  • 功能描述：

    3W to 50W PLANAR SHOCK/VIBRATION PROOF HIGH POWER RESISTORS

供應商型號品牌批號封裝庫存備注價格
BITECH
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
KOA SPEER
23+
10000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
KOA
22+
DIP-2
80000
鄭重承諾只做原裝進口貨
 詢價
KOA SPEER
2021+
DIP2
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
TW
23+
DIP
10395
原裝正品現(xiàn)貨 當天發(fā)貨 提供BOM
 詢價
23+
NA
10858
專做原裝正品,假一罰百!
 詢價
Original
22+23+
New
32101
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
 詢價
KOA SPEER
2000
全新原裝現(xiàn)貨 樣品可售
 詢價
KOA
23+
1206
7350
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術支持!!!
 詢價
24+
N/A
62000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
更多BPR550J供應商 更新時間2024-10-28 9:00:00

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