BLF872分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書(shū)PDF中文資料

General description

A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 250 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

Features

■ Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A:

◆ Peak envelope power load power PL(PEP) = 300 W

◆ Gain Gp = 15 dB

◆ Drain efficiency ηD = 43

◆ Third order intermodulation distortion IMD3 = ?28 dBc

■ Typical DVB performance at 858 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A:

◆ Average output power PL(AV) = 70 W

◆ Gain Gp = 15 dB

◆ Drain efficiency ηD = 30

◆ Third order intermodulation distortion IMD3 = ?28 dBc (4.3 MHz from center frequency)

■ Advanced flange material for optimum thermal behavior and reliability

■ Excellent ruggedness

■ High power gain

■ Designed for broadband operation (UHF band)

■ Excellent reliability

■ Internal input and output matching for high gain and optimum broadband operation

■ Source on underside eliminates DC isolators, reducing common-mode inductance

■ Easy power control

Applications

■ Communication transmitter applications in the UHF band

■ Industrial applications in the UHF band