BLF6G20-40分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

General description

40 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Features

■ Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 28 V and an IDq of 360 mA:

◆ Average output power = 2.5 W

◆ Power gain = 18.8 dB (typ)

◆ Efficiency = 15

◆ ACPR = ?46 dBc

■ Easy power control

■ Integrated ESD protection

■ Excellent ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation (1800 MHz to 2000 MHz)

■ Internally matched for ease of use

■ Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)

Applications

■ RF power amplifiers for W-CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range.