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CDBD540-HF

SMDSchottkyBarrierRectifiers

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CDBMS540LR-HF

SMDSchottkyBarrierRectifier

Features -Forsurfacemountedapplications. -Built-instrainrelief,idealforautomated placement. -Lowforwardvoltage. -Highforwardsurgecurrentcapability.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CEB540A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,36A,RDS(ON)=48m?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB540L

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB540L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,36A,RDS(ON)=50mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. RDS(ON)=53mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB540N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,36A,RDS(ON)=53mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB540N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,36A,RDS(ON)=53mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED540A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,25A,RDS(ON)=49m?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED540L

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED540L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,25A,RDS(ON)=50mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. RDS(ON)=53mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細參數(shù)

  • 型號：

    BGB540

  • 制造商：

    INFINEON

  • 制造商全稱：

    Infineon Technologies AG

  • 功能描述：

    A 35 dB Gain-Sloped LNB I.F. Amplifier for Direct Broadcast Satellite Television Applications using the BGA430 & BGB540 Silicon MMICs

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
24+
SOT-343
163000
一級代理保證進口原裝正品現(xiàn)貨假一罰十價格合理
 詢價
SIE
23+
SOT-343
31000
全新原裝現(xiàn)貨
 詢價
INFINEON
24+
SOT-343SOT-323-4
24200
新進庫存/原裝
 詢價
INFINEON
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
Infineon/英飛凌
1937+
SOT343
9852
只做進口原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
INFINEON/英飛凌
24+
SOT343-4
9600
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實單!
 詢價
INFINEON/英飛凌
23+
SOT143
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
INFINEON
23+
SOT143
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
Infineon
23+
SOT343
3200
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售
 詢價
INFINEON
0537+
SOT-343
2770
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
更多BGB540供應(yīng)商 更新時間2025-3-29 9:02:00

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