BFR740L3RH分立半導(dǎo)體產(chǎn)品的晶體管-雙極（BJT）-射頻規(guī)格書(shū)PDF中文資料

BFR740L3RH屬于分立半導(dǎo)體產(chǎn)品的晶體管-雙極（BJT）-射頻。由英飛凌科技股份公司制造生產(chǎn)的BFR740L3RH晶體管 - 雙極（BJT）- 射頻雙極型射頻晶體管是一種具有三個(gè)端子的半導(dǎo)體器件，用于在涉及射頻的設(shè)備中開(kāi)關(guān)或放大信號(hào)。雙極結(jié)型晶體管設(shè)計(jì)為 NPN 或 PNP，特征參數(shù)包括晶體管類型、集射極擊穿電壓、躍遷頻率、噪聲系數(shù)、增益、功率、DC 電流增益和集電極電流。

Product Brief

The BFR740L3RH is a very low noise wideband NPN RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The BFR740L3RH provides a transition frequency fT of approximately 40 GHz and is suited for low voltage applications (VCEO,max = 4 V) from VHF to 12 GHz. Due to its low power consumption the device is very energy efficient and well suited for mobile applications. The BFR740L3RH is housed in a very thin small leadless package ideal for modules.

Features

? Very low noise figure NFmin = 0.5 dB at 1.9 GHz, 0.8 dB at

5.5 GHz, 3 V, 6 mA

? High power gain Gms = 20 dB at 5.5 GHz, 15 mA, 3 V

? Very thin small leadless package (height only 0.31 mm), hence

ideal for modules with compact size and low profile height

? Pb-free (RoHS compliant) and halogen-free package

? Qualification report according to AEC-Q101 available

Applications

As Low Noise Amplifier (LNA) in

? Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMAX 2.5/3.5/5.5 GHz, UWB, Bluetooth

? Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB

? Multimedia applications such as mobile/portable TV, CATV, FM Radio

? 3G/4G UMTS/LTE mobile phone applications

? ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications

As discrete active mixer, amplifier in VCOs and buffer amplifier