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BFR505T

Marking:N0;Package:SOT-416;RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFR520

NPN 9 GHz wideband transistor

DESCRIPTION TheBFR520isannpnsiliconplanarepitaxialtransistor,intendedforapplicationsintheRFfrontendinwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,pagersandsatelliteTVtune

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFR520

isc Silicon NPN RF Transistor

DESCRIPTION ·HighPowerGain ·HighCurrentGainBandwidthProduct ·LowNoiseFigure APPLICATIONS ·DesignedforRFfrontendinwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordless.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BFR520

Silicon NPN RF Transistor

DESCRIPTION ?HighPowerGain ?HighCurrentGainBandwidthProduct ?LowNoiseFigure APPLICATIONS ?DesignedforRFfrontendinwidebandapplicationsintheGHzrange.suchasanaloganddigitalcellulartelephones,cordless.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

BFR520

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFR520T

NPN 9 GHz wideband transistor

DESCRIPTION NPNtransistorinaplasticSOT416(SC75)envelope. ItisintendedforwidebandapplicationssuchassatelliteTVtuners,cellularphones,cordlessphones,pagersetc.,withsignalfrequenciesupto2GHz. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransit

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFR520T

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFR53

Marking:N1;Package:SOT-23;NPN 2 GHz wideband transistor

DESCRIPTION NPNwidebandtransistorinaplasticSOT23package. FEATURES ?Verylowintermodulationdistortion ?Veryhighpowergain. APPLICATIONS ?Thickandthin-filmcircuits.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFR54

NPN 9 GHz wideband transistor

DESCRIPTION TheBFR540isannpnsiliconplanarepitaxialtransistor,intendedforapplicationsintheRFfrontendinwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MA

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFR54

NPN medium frequency transistor

DESCRIPTION NPNmediumfrequencytransistorinaTO-92;SOT54plasticpackage. FEATURES ?Lowcurrent(max.100mA) ?Lowvoltage(max.15V). APPLICATIONS ?Activeprobes ?Frequencymultipliers ?Linearamplifiers.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

晶體管資料

  • 型號:

    BFR

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-PNP

  • 性質(zhì):

    表面帖裝型 (SMD)

  • 封裝形式:

    貼片封裝

  • 極限工作電壓:

    30V

  • 最大電流允許值:

    5A

  • 最大工作頻率:

    120MHZ

  • 引腳數(shù):

    3

  • 可代換的型號:

    2SB1308,

  • 最大耗散功率:

    0.75W

  • 放大倍數(shù):

  • 圖片代號:

    H-100

  • vtest:

    30

  • htest:

    120000000

  • atest:

    5

  • wtest:

    0.75

詳細參數(shù)

  • 型號:

    BFR

  • 制造商:

    ITT

  • 制造商全稱:

    ITT Industries

  • 功能描述:

    Aerospace Avionic Equipment Geological Exploration

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原封 □
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更多BFR供應商 更新時間2025-4-19 15:00:00