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CDBD640-HF

SchottkyBarrierRectifiers

Features -Metalsiliconjunction,majorcarrierconduction. -6Atotal(3Aperdiodeleg). -Guardingforovervoltageprotection. -Lowpowerloss,highefficiency. -Excellentpowerdissipationoffersbetterreverse leakagecurrentandthermalresistance. -LowProfilesurfacemountappl

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CEBF640

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEBF640

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEBF640

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEDF640

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■200V,15A,RDS(ON)=0.15Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-251&TO-252package. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEDF640

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 200V,15A,RDS(ON)=0.15W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEFF640

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEFF640

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEFF640

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

CEFF640

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    BFP640FESD

  • 制造商：

    Infineon Technologies AG

  • 功能描述：

    RF BIP TRANSISTORS

  • 功能描述：

    RF BIP TRANSISTORS - Tape and Reel

  • 功能描述：

    TRANS RF NPN 4.5V 50MA 4TSFP

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON/英飛凌
24+
SOT23-3
17814
原裝進(jìn)口假一罰十
 詢價(jià)
INFINEON
23+
TSFP-4
8000
只做原裝現(xiàn)貨
 詢價(jià)
INFINEON
23+
TSFP-4
7000
詢價(jià)
INFINEON
24+
con
35960
查現(xiàn)貨到京北通宇商城
 詢價(jià)
INFINEON
24+
con
35960
查現(xiàn)貨到京北通宇商城
 詢價(jià)
Infineon
24+
SMD
8000
射頻(RF)雙極晶體管
 詢價(jià)
英飛凌
報(bào)價(jià)為準(zhǔn)
INF
2990
國(guó)外訂貨7-10個(gè)工作日
 詢價(jià)
三年內(nèi)
1983
只做原裝正品
 詢價(jià)
Infineon
1931+
N/A
493
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 詢價(jià)
Infineon(英飛凌)
2447
TSFP-4
115000
3000個(gè)/圓盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,
 詢價(jià)
更多BFP640FESD供應(yīng)商 更新時(shí)間2025-3-26 18:00:00

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