首頁 >BFG591,115-CUT TAPE>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NPN7GHzwidebandtransistor | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPN7GHzwidebandtransistor DESCRIPTION NPNwidebandtransistorinaSOT89plasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS IntendedforapplicationsintheGHzrangesuchasMATV orCATVamplifiersandR | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
iscSiliconNPNRFTransistor DESCRIPTION ?HighPowerGain ?HighCurrentGainBandwidthProduct ?LowNoiseFigure APPLICATIONS ?DesignedforuseinMATVorCATVamplifiersandRF communicationssubscribersequipment. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
SiliconNPNRFTransistor DESCRIPTION ?HighPowerGain ?HighCurrentGainBandwidthProduct ?LowNoiseFigure APPLICATIONS ?DesignedforuseinMATVorCATVamplifiersandRF communicationssubscribersequipment. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產品股份有限公司 | NJSEMI | ||
NPN7GHzwidebandtransistor | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
250WATTS(AC)DC/DCSINGLEOUTPUT 250WATTS(AC)DC/DCSINGLEOUTPUT Features ?SingleOutput ?3Ux21(24)TEx166.5mm(24TEfor5Voutputs) ?Weight1.7kg | POWERBOX Powerbox manufactures | POWERBOX | ||
LEDForFlashLightSource LEDForFlashLightSource ●Highoutputtypewithreflectorequipped. | CITIZENCitizen Electronics Co., Ltd 西鐵城電子株式會社 | CITIZEN | ||
PNPLowVCE(Sat)1.0Amptransistor DESCRIPTION: TheCENTRALSEMICONDUCTORCMLT591EisaPNPLowVCE(SAT)1.0Amptransistor,epoxymoldedinaspacesavingSOT-563surfacemountpackageanddesignedforapplicationsrequiringahighcurrentcapabilityandlowsaturationvoltages. MARKINGCODE:L59 | CentralCentral Semiconductor Corp 美國中央半導體 | Central | ||
SILICONPLANAREPITAXIALTRANSISTORS SILICONPLANAREPITAXIALTRANSISTORS PNPtransistor | CDIL Continental Device India Limited | CDIL | ||
SOT-23-PowerTransistorandDarlingtons | RECTRON Rectron Semiconductor | RECTRON | ||
PNPEPITAXIALPLANARSILICONTRANSISTOR PNPEPITAXIALPLANARSILICONTRANSISTOR ComplementaryCMMT491A | CDIL Continental Device India Limited | CDIL | ||
SURFACEMOUNTPNPSILICONTRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCMPT591EtypeisaPNPsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighcurrent,generalpurposeamplifierapplications. MarkingCodeisC59. | CentralCentral Semiconductor Corp 美國中央半導體 | Central | ||
SURFACEMOUNTPNPSILICONTRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCMPT591EtypeisaPNPsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighcurrent,generalpurposeamplifierapplications. MarkingCodeisC59. | CentralCentral Semiconductor Corp 美國中央半導體 | Central | ||
SmallSignalTransistorPNP-Amp/SwitchTransistorChip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize19x19MILS DieThickness9.0MILS BaseBondingPadArea3.5x4.3MILS EmitterBondingPadArea3.5x4.5MILS TopSideMetalizationAl- | CentralCentral Semiconductor Corp 美國中央半導體 | Central | ||
SmallSignalTransistorPNP-Amp/SwitchTransistorChip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize19x19MILS DieThickness7.1MILS BaseBondingPadArea3.5x4.3MILS EmitterBondingPadArea3.5x4.5MILS TopSideMetalizationAl | CentralCentral Semiconductor Corp 美國中央半導體 | Central | ||
SmallSignalTransistorPNP-Amp/SwitchTransistorChip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize19x19MILS DieThickness5.9MILS BaseBondingPadArea3.5x4.3MILS EmitterBondingPadArea3.5x4.5MILS TopSideMetalizationAl | CentralCentral Semiconductor Corp 美國中央半導體 | Central | ||
SolidStateSensorsClosedLoopCurrentSensors DESCRIPTION ThesenewindustrialcurrentsensorsextendHoneywell’sclosedloopcurrentsensingcapability.Theyofferincreasedcurrentmeasuringcapabilityupto1000Aoveranextendedtemperaturerangeof-40°Cto+85°Candareavailablewithdifferentterminaloptions. Thesensorsareclo | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國際 | Honeywell | ||
SolidStateSensorsClosedLoopCurrentSensors DESCRIPTION ThesenewindustrialcurrentsensorsextendHoneywell’sclosedloopcurrentsensingcapability.Theyofferincreasedcurrentmeasuringcapabilityupto1000Aoveranextendedtemperaturerangeof-40°Cto+85°Candareavailablewithdifferentterminaloptions. Thesensorsareclo | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國際 | Honeywell | ||
SolidStateSensorsClosedLoopCurrentSensors DESCRIPTION ThesenewindustrialcurrentsensorsextendHoneywell’sclosedloopcurrentsensingcapability.Theyofferincreasedcurrentmeasuringcapabilityupto1000Aoveranextendedtemperaturerangeof-40°Cto+85°Candareavailablewithdifferentterminaloptions. Thesensorsareclo | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國際 | Honeywell |
詳細參數(shù)
- 型號:
BFG591,115-CUT TAPE
- 制造商:
NXP
- 功能描述:
BFG591 Series 7 GHz Wideband NPN Transistor - SOT223
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
NXP/恩智浦 |
24+ |
65230 |
詢價 | ||||
NXP/恩智浦 |
23+ |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | |||
NXP/恩智浦 |
23+ |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | |||
NXP/恩智浦 |
24+ |
TO223 |
5070 |
全新原裝,價格優(yōu)勢,原廠原包 |
詢價 | ||
PH |
24+ |
原廠封裝 |
7706 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
23+ |
原廠封裝 |
5177 |
現(xiàn)貨 |
詢價 | ||
NXP/恩智浦 |
23+ |
SOT143 |
722325 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
NEXPERIA/安世 |
23+ |
12000 |
詢價 | ||||
NXP/恩智浦 |
23+ |
SOT143 |
54258 |
全新原廠原裝正品現(xiàn)貨,可提供技術支持、樣品免費! |
詢價 | ||
NXP |
17+ |
NA |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 |
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