| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
NPN9GHzwidebandtransistor DESCRIPTION NPNtransistorinaplasticSOT323envelope. ItisintendedforRFwidebandamplifierapplicationssuchassatelliteTVsystemsandRFportablecommunicationequipmentwithsignalfrequenciesupto2GHz. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
LowNoiseFigure DESCRIPTION ?LowNoiseFigure NF=1.3dBTYP.@VCE=8V,lc=10mA,f=900MHz ?HighCurrent-Gain—BandwidthProduct fT=9GHzTYP.@VCE=8V,lc=40mA,f=1GHz APPLICATIONS ?DesignedforRFwidebandamplifierapplicationssuchas satelliteTVsystemsandRFportable | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
SiliconNPNRFTransistor DESCRIPTION ?LowNoiseFigure NF=1.3dBTYP.@VCE=8V,lc=10mA,f=900MHz ?HighCurrent-Gain—BandwidthProduct fT=9GHzTYP.@VCE=8V,lc=40mA,f=1GHz APPLICATIONS ?DesignedforRFwidebandamplifierapplicationssuchas satelliteTVsystemsandRFportable | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產(chǎn)品股份有限公司 | NJSEMI | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
NPNSiGewidebandtransistor DESCRIPTION NPNSiGewidebandtransistorforlowvoltageapplicationsinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES ?Veryhighpowergain ?Verylownoisefigure ?Hightransitionfrequency ?Emitteristhermallead ?Lowfeedbackcapacitance ?45GHzSiGeprocess. APPLICATI | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
A35dBGain-SlopedLNBI.F.AmplifierforDirectBroadcastSatelliteTelevisionApplicationsusingtheBGA430&BGB540SiliconMMICs Description TheBGA430isabroadbandhighgainamplifierbaseduponInfineonTechnologies’SiliconBipolarTechnologyB6HF.HousedinasmallSOT363packagethisSiliconMonolithicMicrowaveIntegratedCircuit(MMIC)requiresveryfewexternalcomponentsduetotheintegratedbiasingconcept. | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
ActiveBiasedRFTransistor Description SIEGET?-45NPNTransistorwithintegratedbiasingforhighgainlownoisefigureapplications.ICcanbecontrolledusingIBiasaccordingtoIC=10*IBias. Features ?Gms=18dBat1.8GHz ?SmallSOT343package ?Currenteasyadjustablebyanexternalresistor ?Opencollectoroutpu | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
BGB540asa1.85GHzLowNoiseAmplifier BGB540asa1.85GHzLowNoiseAmplifier | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SCHOTTKYRECTIFIERVOLTAGE40VoltsCURRENT500mAmpers | RECTRON Rectron Semiconductor | RECTRON |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
表面帖裝型 （SMD）_超高頻/特高頻 （UHF）
- 封裝形式：
貼片封裝
- 極限工作電壓：
20V
- 最大電流允許值：
0.12A
- 最大工作頻率：
9GHZ
- 引腳數(shù)：
3
- 可代換的型號：
- 最大耗散功率：
- 放大倍數(shù)：
- 圖片代號：
H-17
- vtest：
20
- htest：
9000000000
- atest：
0.12
- wtest：
0
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NXP(恩智浦) |
24+ |
標準封裝 |
46048 |
全新原裝正品/價格優(yōu)惠/質(zhì)量保障 |
詢價 | ||
PHI |
24+ |
SOT-143 |
18000 |
詢價 | |||
PHILIPS |
23+ |
SOT143 |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
PHILIPS |
24+/25+ |
678 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
PH |
24+ |
SOT-23 |
21322 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
NXP |
16+ |
NA |
8800 |
誠信經(jīng)營 |
詢價 | ||
PHI |
24+ |
原廠封裝 |
5000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
PHI |
24+ |
SOT143 |
2987 |
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電! |
詢價 | ||
SOT-143 |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價 | ||
NXP |
18+ |
SOT143 |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 |
