首頁 >BFG505,215>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
BFG505,215 | 包裝：卷帶（TR） 封裝/外殼：TO-253-4，TO-253AA 類別：分立半導體產(chǎn)品 晶體管 - 雙極（BJT）- 射頻 描述：RF TRANS NPN 15V 9GHZ SOT143B | NXP USA Inc. NXP USA Inc. | NXP USA Inc. | |
NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange, | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
DualNPNwidebandtransistor DESCRIPTION DualtransistorwithtwosiliconNPNRFdiesinasurfacemount,6-pinSOT363(S-mini)package.ThetransistorsareprimarilyintendedforwidebandapplicationsintheGHz-rangeintheRFfrontendofanaloganddigitalcellularphones,cordlessphones,radardetectors,pagersandsat | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
NPN9GHzwidebandtransistor DESCRIPTION TheBFR505isannpnsiliconplanarepitaxialtransistor,intendedforapplicationsintheRFfrontendinwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,pagersandsatelliteTVtuners | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
NPN9GHzwidebandtransistor DESCRIPTION NPNtransistorinaplasticSOT416(SC-75)package. FEATURES ?Lowcurrentconsumption ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability ?SOT416(SC-75)package. APPLICATIONS Lowpoweramplifiers,oscillat | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
NPN9GHzwidebandtransistor DESCRIPTION NPNtransistorinaplasticSOT323envelope. Itisintendedforlowpoweramplifiers,oscillatorsandmixersparticularlyinRFportablecommunicationequipment(cellularphones,cordlessphones,pagers)upto2GHz. FEATURES ?Lowcurrentconsumption ?Highpowergain ?Lownois | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
NPN9GHzwidebandtransistor | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 錦美電子泉州錦美電子有限公司 | JMNIC |
產(chǎn)品屬性
- 產(chǎn)品編號：
BFG505,215
- 制造商：
NXP USA Inc.
- 類別：
分立半導體產(chǎn)品 > 晶體管 - 雙極（BJT）- 射頻
- 包裝：
卷帶（TR）
- 晶體管類型：
NPN
- 電壓 - 集射極擊穿（最大值）：
15V
- 頻率 - 躍遷：
9GHz
- 噪聲系數(shù)（dB，不同 f 時的典型值）：
1.2dB ~ 2.1dB @ 900MHz
- 功率 - 最大值：
150mW
- 不同?Ic、Vce?時 DC 電流增益 (hFE)（最小值）：
60 @ 5mA，6V
- 電流 - 集電極 (Ic)（最大值）：
18mA
- 工作溫度：
175°C（TJ）
- 安裝類型：
表面貼裝型
- 封裝/外殼：
TO-253-4，TO-253AA
- 供應商器件封裝：
SOT-143B
- 描述：
RF TRANS NPN 15V 9GHZ SOT143B
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NXP/恩智浦 |
2021+ |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
NXP |
22+ |
NA |
45000 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
NXP |
2022+ |
原廠原包裝 |
8600 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
Philips |
22+23+ |
Sot-143 |
33755 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
PHILIPS/飛利浦 |
23+ |
SOT-143 |
23000 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
PHL |
17+ |
SOT-143 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
NXP |
2017+ |
SOT143 |
6528 |
只做原裝正品!假一賠十! |
詢價 | ||
NXP |
23+ |
SOT-143B |
7500 |
全新原裝優(yōu)勢 |
詢價 | ||
NXP恩智浦/PHILIPS飛利浦 |
24+ |
SOT-143SOT-23-4 |
8962 |
新進庫存/原裝 |
詢價 | ||
PHI |
05+ |
原廠原裝 |
50051 |
只做全新原裝真實現(xiàn)貨供應 |
詢價 |
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