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BF901

Silicon n-channel dual gate MOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorsinplasticmicrominiatureSOT143andSOT143Renvelopes,withsourceandsubstrateinterconnected.TheyareintendedforUHFandVHFapplications,suchastelevisiontunersandprofessionalcommunicationsequipmentespeciallysuitedforlowvol

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF901R

Silicon n-channel dual gate MOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorsinplasticmicrominiatureSOT143andSOT143Renvelopes,withsourceandsubstrateinterconnected.TheyareintendedforUHFandVHFapplications,suchastelevisiontunersandprofessionalcommunicationsequipmentespeciallysuitedforlowvol

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF904

N-channel dual gate MOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143BandSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF904

N-channel dual gate MOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143BandSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904A

N-channel dual gate MOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF904A

N-channel dual gate MOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904A

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904AR

N-channel dual gate MOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904AR

N-channel dual gate MOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF904AR

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904AWR

N-channel dual gate MOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF904AWR

N-channel dual gate MOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904AWR

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904R

N-channel dual gate MOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143BandSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF904R

N-channel dual gate MOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143BandSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904WR

N-channel dual-gate MOS-FET

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT343Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES ?Speciallyde

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF908

Dual-gate MOS-FETs

DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.Thetransistorsareprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES ?Highforwardtransferadmittance ?Shortch

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF908

Dual-gate MOS-FETs

DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.Thetransistorsareprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES ?Highforwardtransferadmittance ?Shortch

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF908

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF908R

Dual-gate MOS-FETs

DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.Thetransistorsareprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES ?Highforwardtransferadmittance ?Shortch

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

詳細(xì)參數(shù)

  • 型號:

    BF9

  • 制造商:

    NXP Semiconductors

  • 功能描述:

    UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
NXP/恩智浦
23+
SOT143
100586
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!
詢價
NXP/恩智浦
24+
SOT143
7906200
一站配齊,原盒原包現(xiàn)貨原廠一手渠道聯(lián)系
詢價
PHI
24+
SOT-143
9000
詢價
PHILIPS
23+
SOT-143
6680
全新原裝優(yōu)勢
詢價
NXP
13+
55000
特價熱銷現(xiàn)貨庫存
詢價
NXP
24+
SOT-143
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價
NXP
1742+
SOT143
98215
只要網(wǎng)上有絕對有貨!只做原裝正品!
詢價
SOT-143
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
詢價
NEXPERIA
23+
SOT-143
63000
原裝正品現(xiàn)貨
詢價
NXP
20+
SOT143
49000
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
更多BF9供應(yīng)商 更新時間2024-10-26 20:00:00