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BFP420

NPNSiliconRFTransistor(ForhighgainlownoiseamplifiersForoscillatorsupto10GHz)

NPNSiliconRFTransistor ?Forhighgainlownoiseamplifiers ?Foroscillatorsupto10GHz ?NoisefigureF=1.05dBat1.8GHzoutstandingGms=20dBat1.8GHz ?TransitionfrequencyfT=25GHz ?Goldmetalizationforhighreliability ?SIEGET?25-Line SiemensGroundedEmitter

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFP420

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor ?Forhighgainandlownoiseamplifiers ?MinimumnoisefigureNFmin=1.1dBat1.8GHzOutstandingGms=21dBat1.8GHz ?Foroscillatorsupto10GHz ?TransitionfrequencyfT=25GHz ?Pb-free(RoHScompliant)andhalogen-freepackagewithvisib

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP420

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP420F

NPNSiliconRFTransistor

ProductBrief TheBFP420FisalownoisewidebandNPNbipolarRFtransistor.ThecollectordesignsupportsvoltagesuptoVCEO=4.5VandcurrentsuptoIC=60mA.Thedeviceisespeciallysuitedformobileapplicationsinwhichlowpowerconsumptionisakeyrequirement.Thetypicaltransition

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP420F

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP420F

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP420W

iscSiliconNPNRFTransistor

DESCRIPTION ?HighPowerGain ?HighCurrentGainBandwidthProduct ?LowNoiseFigure ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?DesignedforuseinRFwidebandamplifiersandoscillators.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BFV420

NPNhigh-voltagetransistor

DESCRIPTION NPNhigh-voltagetransistorinaTO-92;SOT54plasticpackage.PNPcomplement:BFV421. FEATURES ?Lowcurrent(max.100mA) ?Highvoltage(max.100V). APPLICATIONS ?Primarilyintendedforvideoapplications(monitors).

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFY420

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?ForHighGainLowNoiseAmplifiers ?ForOscillatorsupto10GHz ?NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz ?Hermeticallysealedmicrowavepackage ?TransitionFrequencyfT=22G

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY420

HiRelNPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY420ES

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?ForHighGainLowNoiseAmplifiers ?ForOscillatorsupto10GHz ?NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz ?Hermeticallysealedmicrowavepackage ?TransitionFrequencyfT=22G

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY420H

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?ForHighGainLowNoiseAmplifiers ?ForOscillatorsupto10GHz ?NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz ?Hermeticallysealedmicrowavepackage ?TransitionFrequencyfT=22G

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY420P

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?ForHighGainLowNoiseAmplifiers ?ForOscillatorsupto10GHz ?NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz ?Hermeticallysealedmicrowavepackage ?TransitionFrequencyfT=22G

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY420S

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?ForHighGainLowNoiseAmplifiers ?ForOscillatorsupto10GHz ?NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz ?Hermeticallysealedmicrowavepackage ?TransitionFrequencyfT=22G

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BGA420

Si-MMIC-AmplifierinSIEGET25-Technologie(Cascadable50廓-gainblockUnconditionallystable)

Si-MMIC-AmplifierinSIEGET?25-Technologie Preliminarydata ?Cascadable50?-gainblock ?Unconditionallystable ?Gain|S21|2=13dBat1.8GHzIP3out=+9dBmat1.8GHz(VD=3V,ID=typ.6.4mA) ?NoisefigureNF=2.2dBat1.8GHz ?Reverseisolation>28dBandreturnlossIN/O

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BGA420

Si-MMIC-AmplifierinSIEGET25-Technologie

Si-MMIC-AmplifierinSIEGET?25-Technologie ?Cascadable50?-gainblock ?Unconditionallystable ?Gain|S21|2=13dBat1.8GHzIP3out=+13dBmat1.8GHz(VD=3V,ID=typ.6.7mA) ?NoisefigureNF=2.2dBat1.8GHz ?Reverseisolation>28dBandreturnlossIN/OUT>12dBat1.8

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BGA420

Si-MMIC-AmplifierinSIEGET25-Technologie

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BGB420

ActiveBiasedTransistor

Description SIEGET?-25NPNTransistorwithintegratedbiasingforhighgainlownoisefigureapplications.ICcanbecontrolledusingIBiasaccordingtoIC=10*IBias. Features ?Forhighgainlownoiseamplifiers ?Idealforwidebandapplications,cellulartelephones, cordlesstelephones,

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BGC420

Self-BiasedBFP420

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BGR420

NPNSiliconRFTransistorWithBiasCircuitry

Features ?NoisefigureNF=1.5dBat0.4GHz ?GainS21=26dBat0.4GHz ?Onchipbiascircuitry,13mAbiascurrentatVCC=3.6V; VBB=2.8V ?SIEGET?25GHzfT-Line ?Pb-free(RoHScompliant)package *Shorttermdescription Applications ?LNAs

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數

  • 型號：

    BF420T/R

  • 功能描述：

    TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | TO-92

供應商型號品牌批號封裝庫存備注價格
CJ(江蘇長電/長晶)
23+
TO923
6000
誠信服務，絕對原裝原盤
 詢價
24+
N/A
47000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
ON
24+
T092
18000
詢價
ON
16+
原廠封裝
10000
全新原裝正品,代理優(yōu)勢渠道供應,歡迎來電咨詢
 詢價
ON Semiconductor
2022+
TO-92-3
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
onsemi
24+
TO-226-3 TO-92-3 長基體(成形
9350
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
 詢價
PHILIPS/飛利浦
23+
TO92
50000
全新原裝正品現貨,支持訂貨
 詢價
PHILIPS/飛利浦
2022
TO92
80000
原裝現貨,OEM渠道,歡迎咨詢
 詢價
NEXPERIA/安世
2122+
SOT54
60000
全新原裝正品現貨,假一賠十
 詢價
CJ/長電
22+
TO-92
115000
只做原裝進口現貨
 詢價
更多BF420T/R供應商 更新時間2025-1-2 18:26:00

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