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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
BF121	文件：90.82 Kbytes Page：1 Pages	2.00mm Pitch Socket Dual Row, Surface Mount, Dual Entry	GCT Global Connector Technology	GCT
BF1210	文件：252.04 Kbytes Page：21 Pages	Dual N-channel dual gate MOSFET Generaldescription TheBF1210isacombinationoftwodualgateMOSFETamplifierswithsharedsourceandgate2leads. Thesourceandsubstrateareinterconnected.InternalbiascircuitsenableDCstabilizationandaverygoodcrossmodulationperformanceduringAGC.Integrateddiodesbetweenth	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
BF1210	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BF1211	文件：112.73 Kbytes Page：15 Pages	N-channel dual-gate MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1211,BF1211RandBF1211WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
BF1211	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BF1211R	文件：112.73 Kbytes Page：15 Pages	N-channel dual-gate MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1211,BF1211RandBF1211WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
BF1211R	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BF1211WR	文件：112.73 Kbytes Page：15 Pages	N-channel dual-gate MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1211,BF1211RandBF1211WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
BF1211WR	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BF1212	文件：131.09 Kbytes Page：15 Pages	N-channel dual-gate MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1212,BF1212RandBF1212WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
BF1212	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BF1212R	文件：131.09 Kbytes Page：15 Pages	N-channel dual-gate MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1212,BF1212RandBF1212WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
BF1212R	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BF1212WR	文件：131.09 Kbytes Page：15 Pages	N-channel dual-gate MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1212,BF1212RandBF1212WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
BF1212WR	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BF1214	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BF1215	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BF1216	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BF1217	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BF1217WR	文件：185.07 Kbytes Page：17 Pages	N-channel dual gate MOSFET Productprofile 1.1Generaldescription EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrate interconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessive inputvoltagesurges.TheBF1217WRisencapsulatedintheSOT343Rplasticpackage. 1.2Fe	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp

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晶體管資料

型號(hào)：
BF121
別名：
三極管、晶體管、晶體三極管
生產(chǎn)廠家：
制作材料：
Si-NPN
性質(zhì)：
調(diào)幅（AM）_調(diào)頻（FM）_前置放大（V）
封裝形式：
特殊封裝
極限工作電壓：
最大電流允許值：
最大工作頻率：
350MHZ
引腳數(shù)：
4
可代換的型號(hào)：
BF167,BF198,BF225,BF310,BF367,BF596,3DG110F,
最大耗散功率：
放大倍數(shù)：
圖片代號(hào)：
G-178
vtest：
0
htest：
350000000
atest：
0
wtest：
0

詳細(xì)參數(shù)

型號(hào)：
BF121
制造商：
PHILIPS
制造商全稱：
NXP Semiconductors
功能描述：
Dual N-channel dual gate MOSFET

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市毅創(chuàng)騰電子科技有限公司	BF1212WR(PB-FREE)	PHI		SOT23-4	2978	正品原裝--自家現(xiàn)貨-實(shí)單可談	詢價(jià)
深圳市凌旭科技有限公司	BF1214	NXP	2016+	SOT363	9000	只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!	詢價(jià)
深圳市一線半導(dǎo)體有限公司	BF1211R	NXP恩智浦/PHILIPS飛利浦	24+	SOT-143SOT-23-4	9200	新進(jìn)庫(kù)存/原裝	詢價(jià)
千層芯半導(dǎo)體(深圳)有限公司	BF1212WR,115	NXP	17+	SOT343	5000	深圳現(xiàn)貨價(jià)格優(yōu)勢(shì)	詢價(jià)
深圳市昌和盛利電子有限公司	BF1212R	PHI	23+	SOT143	12300		詢價(jià)
深圳市利加科技有限公司	BF1212	NXP	16+	NA	8800	誠(chéng)信經(jīng)營(yíng)	詢價(jià)
深圳市豪邁興電子有限公司	BF1212WR	NXP	2339+	SOT-343	5645	公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!	詢價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	BF1211R	NXP	17+	SOT143	6200	100%原裝正品現(xiàn)貨	詢價(jià)
深圳市弘為電子有限公司	BF1211WR	PHILIPS	16+	SOT343	3000	原裝現(xiàn)貨假一罰十	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	BF1212WR	NXP	23+	SOT-343	30000	原裝正品,假一罰十	詢價(jià)

更多BF121供應(yīng)商更新時(shí)間2024-10-28 16:21:00

晶體管資料

詳細(xì)參數(shù)

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