General description

These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges.

Features

■ Specially designed for low loss RF switching up to 1 GHz

Applications

■ Various RF switching applications such as:

◆ Passive loop through for VCR tuner

◆ Transceiver switching

BF1108R屬于分立半導體產(chǎn)品 > 晶體管 - FET，MOSFET - 射頻。恩智浦半導體公司制造生產(chǎn)的BF1108R晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。