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CEB1012

N-ChannelEnhancementModeFieldTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB1012

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB1012L

N-ChannelEnhancementModeFieldTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB1012L

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED1012

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED1012L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP1012

N-ChannelEnhancementModeFieldTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP1012L

N-ChannelEnhancementModeFieldTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU1012

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU1012L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

詳細參數(shù)

  • 型號：

    BF1012

  • 制造商：

    INFINEON

  • 制造商全稱：

    Infineon Technologies AG

  • 功能描述：

    Silicon N-Channel MOSFET Tetrode(For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network

供應商型號品牌批號封裝庫存備注價格
NXP
23+
SOT143
10500
原裝現(xiàn)貨特價熱銷
 詢價
Infineon/英飛凌
24+
SOT-143
163000
一級代理保證進口原裝正品現(xiàn)貨假一罰十價格合理
 詢價
INFINEON
24+
SOT-143SOT-23-4
12200
新進庫存/原裝
 詢價
INFINEON
24+
143
5000
只做原裝公司現(xiàn)貨
 詢價
NXP
21+
SOT143
12588
原裝正品,自己庫存 假一罰十
 詢價
INFINEON
23+
SOT-143
63000
原裝正品現(xiàn)貨
 詢價
INFINEO
2020+
143
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
INFINEON/英飛凌
24+
SOT-143
9600
原裝現(xiàn)貨,優(yōu)勢供應,支持實單!
 詢價
INFINEON/英飛凌
23+
SOT-143
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
NXP/恩智浦
2022+
SOT143
900
原廠代理 終端免費提供樣品
 詢價
更多BF1012供應商 更新時間2025-4-17 16:03:00

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