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BDT63

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·CollectorCurrent-IC=10A ·HighDCCurrentGain-hFE=1000(Min)@IC=3A ·ComplementtoTypeBDT62/A/B/C APPLICATIONS ·Designedforaudiooutputstagesandgeneralpurposeamplifierapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BDT63

SILICON DARLINGTON POWER TRANSISTORS

NPNepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220envelope.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication. PNPcomplementsareBDT62-A-B-C CompliancetoRoHS.

COMSET

Comset Semiconductor

BDT63

Silicon NPN Darlington Power Transistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BDT63A

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·CollectorCurrent-IC=10A ·HighDCCurrentGain-hFE=1000(Min)@IC=3A ·ComplementtoTypeBDT62/A/B/C APPLICATIONS ·Designedforaudiooutputstagesandgeneralpurposeamplifierapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BDT63A

SILICON DARLINGTON POWER TRANSISTORS

NPNepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220envelope.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication. PNPcomplementsareBDT62-A-B-C CompliancetoRoHS.

COMSET

Comset Semiconductor

BDT63B

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·CollectorCurrent-IC=10A ·HighDCCurrentGain-hFE=1000(Min)@IC=3A ·ComplementtoTypeBDT62/A/B/C APPLICATIONS ·Designedforaudiooutputstagesandgeneralpurposeamplifierapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BDT63B

SILICON DARLINGTON POWER TRANSISTORS

NPNepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220envelope.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication. PNPcomplementsareBDT62-A-B-C CompliancetoRoHS.

COMSET

Comset Semiconductor

BDT63C

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·CollectorCurrent-IC=10A ·HighDCCurrentGain-hFE=1000(Min)@IC=3A ·ComplementtoTypeBDT62/A/B/C APPLICATIONS ·Designedforaudiooutputstagesandgeneralpurposeamplifierapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BDT63C

SILICON DARLINGTON POWER TRANSISTORS

NPNepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220envelope.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication. PNPcomplementsareBDT62-A-B-C CompliancetoRoHS.

COMSET

Comset Semiconductor

BDT63A

Silicon NPN Darlington Power Transistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

晶體管資料

  • 型號(hào):

    BDT63F

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-N+Darl+Di

  • 性質(zhì):

    LSO

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    60V

  • 最大電流允許值:

    10A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

    BDT65F,2SD1827,2SD1793,2SD1591,

  • 最大耗散功率:

    >17W

  • 放大倍數(shù):

    β>1000

  • 圖片代號(hào):

    B-45

  • vtest:

    60

  • htest:

    999900

  • atest:

    10

  • wtest:

    17.0001

詳細(xì)參數(shù)

  • 型號(hào):

    BDT63

  • 制造商:

    ISC

  • 制造商全稱:

    Inchange Semiconductor Company Limited

  • 功能描述:

    isc Silicon NPN Darlington Power Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
24+
TO-220
10000
全新
詢價(jià)
ST/進(jìn)口原
17+
TO-220
6200
詢價(jià)
ST
20+
TO-220
38560
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
詢價(jià)
ST/意法
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
ST/意法
2022+
TO-220
12888
原廠代理 終端免費(fèi)提供樣品
詢價(jià)
ST
1135+
TO-220
10
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
ST
23+
TO-220
16900
正規(guī)渠道,只有原裝!
詢價(jià)
N/A
23+
SMD
5177
現(xiàn)貨
詢價(jià)
ST/意法
24+
NA/
10
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票
詢價(jià)
ST
22+
TO-220
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價(jià)
更多BDT63供應(yīng)商 更新時(shí)間2025-4-15 14:00:00