首頁 >BDT61>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

BDT61

NPN SILICON POWER DARLINGTONS

NPNSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBDT60,BDT60A,BDT60BandBDT60C ●50Wat25°CCaseTemperature ●4AContinuousCollectorCurrent ●MinimumhFEof750at1.5V,3A

POINN

Power Innovations Ltd

BDT61

isc Silicon NPN Darlington Power Transistors

DESCRIPTION ?DCCurrentGain-hFE=750(Min)@IC=1.5A ?Collector-EmitterSustainingVoltage-:VCEO(SUS)=60V(Min)-BDT61;80V(Min)-BDT61A;100V(Min)-BDT61B;120V(Min)-BDT61C ?ComplementtoTypeBDT60/A/B/C APPLICATIONS ?Designedforuseinaudioamplifieroutputstages,generalpur

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BDT61

Silicon NPN Darlington Power Transistors

DESCRIPTION ?DCCurrentGain-hFE=750(Min)@IC=1.5A ?Collector-EmitterSustainingVoltage-:VCEO(SUS)=60V(Min)-BDT61;80V(Min)-BDT61A;100V(Min)-BDT61B;120V(Min)-BDT61C ?ComplementtoTypeBDT60/A/B/C APPLICATIONS ?Designedforuseinaudioamplifieroutputstages,generalpur

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BDT61

NPN SILICON POWER DARLINGTONS

BournsBourns Electronic Solutions

伯恩斯

BDT61A

isc Silicon NPN Darlington Power Transistors

DESCRIPTION ?DCCurrentGain-hFE=750(Min)@IC=1.5A ?Collector-EmitterSustainingVoltage-:VCEO(SUS)=60V(Min)-BDT61;80V(Min)-BDT61A;100V(Min)-BDT61B;120V(Min)-BDT61C ?ComplementtoTypeBDT60/A/B/C APPLICATIONS ?Designedforuseinaudioamplifieroutputstages,generalpur

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BDT61A

NPN SILICON POWER DARLINGTONS

NPNSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBDT60,BDT60A,BDT60BandBDT60C ●50Wat25°CCaseTemperature ●4AContinuousCollectorCurrent ●MinimumhFEof750at1.5V,3A

POINN

Power Innovations Ltd

BDT61A

Silicon NPN Darlington Power Transistors

DESCRIPTION ?DCCurrentGain-hFE=750(Min)@IC=1.5A ?Collector-EmitterSustainingVoltage-:VCEO(SUS)=60V(Min)-BDT61;80V(Min)-BDT61A;100V(Min)-BDT61B;120V(Min)-BDT61C ?ComplementtoTypeBDT60/A/B/C APPLICATIONS ?Designedforuseinaudioamplifieroutputstages,generalpur

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BDT61B

NPN SILICON POWER DARLINGTONS

NPNSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBDT60,BDT60A,BDT60BandBDT60C ●50Wat25°CCaseTemperature ●4AContinuousCollectorCurrent ●MinimumhFEof750at1.5V,3A

POINN

Power Innovations Ltd

BDT61B

isc Silicon NPN Darlington Power Transistors

DESCRIPTION ?DCCurrentGain-hFE=750(Min)@IC=1.5A ?Collector-EmitterSustainingVoltage-:VCEO(SUS)=60V(Min)-BDT61;80V(Min)-BDT61A;100V(Min)-BDT61B;120V(Min)-BDT61C ?ComplementtoTypeBDT60/A/B/C APPLICATIONS ?Designedforuseinaudioamplifieroutputstages,generalpur

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BDT61B

Silicon NPN Darlington Power Transistors

DESCRIPTION ?DCCurrentGain-hFE=750(Min)@IC=1.5A ?Collector-EmitterSustainingVoltage-:VCEO(SUS)=60V(Min)-BDT61;80V(Min)-BDT61A;100V(Min)-BDT61B;120V(Min)-BDT61C ?ComplementtoTypeBDT60/A/B/C APPLICATIONS ?Designedforuseinaudioamplifieroutputstages,generalpur

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BDT61C

NPN SILICON POWER DARLINGTONS

NPNSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBDT60,BDT60A,BDT60BandBDT60C ●50Wat25°CCaseTemperature ●4AContinuousCollectorCurrent ●MinimumhFEof750at1.5V,3A

POINN

Power Innovations Ltd

BDT61C

isc Silicon NPN Darlington Power Transistors

DESCRIPTION ?DCCurrentGain-hFE=750(Min)@IC=1.5A ?Collector-EmitterSustainingVoltage-:VCEO(SUS)=60V(Min)-BDT61;80V(Min)-BDT61A;100V(Min)-BDT61B;120V(Min)-BDT61C ?ComplementtoTypeBDT60/A/B/C APPLICATIONS ?Designedforuseinaudioamplifieroutputstages,generalpur

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BDT61C

Silicon NPN Darlington Power Transistors

DESCRIPTION ?DCCurrentGain-hFE=750(Min)@IC=1.5A ?Collector-EmitterSustainingVoltage-:VCEO(SUS)=60V(Min)-BDT61;80V(Min)-BDT61A;100V(Min)-BDT61B;120V(Min)-BDT61C ?ComplementtoTypeBDT60/A/B/C APPLICATIONS ?Designedforuseinaudioamplifieroutputstages,generalpur

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BDT61F

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ?HighDCCurrentGain ?LowSaturationVoltage ?ComplementtoTypeBDT60F ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?DesignedforuseascomplementaryAFpush-pulloutputstageapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BDT61A

NPN SILICON POWER DARLINGTONS

BournsBourns Electronic Solutions

伯恩斯

BDT61AF

isc Silicon NPN Darlington Power Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BDT61B

NPN SILICON POWER DARLINGTONS

BournsBourns Electronic Solutions

伯恩斯

BDT61BF

isc Silicon NPN Darlington Power Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BDT61C

NPN SILICON POWER DARLINGTONS

BournsBourns Electronic Solutions

伯恩斯

BDT61CF

isc Silicon NPN Darlington Power Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    BDT61

  • 功能描述：

    達林頓晶體管 50W 4A NPN

  • RoHS：

    否

  • 制造商：

    Texas Instruments

  • 配置：

    Octal

  • 晶體管極性：

    NPN 集電極—發(fā)射極最大電壓

  • VCEO：

    50 V 發(fā)射極 - 基極電壓

  • VEBO：

    集電極—基極電壓

  • 最大直流電集電極電流：

    0.5 A

  • 最大工作溫度：

    + 150 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    SOIC-18

  • 封裝：

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
TO-220
10000
全新
 詢價
ST/進口原
17+
TO-220
6200
詢價
BOURNS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
ST
1822+
TO-220
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
ST
18+
TO-220
41200
原裝正品,現(xiàn)貨特價
 詢價
ST
20+
TO-220
38560
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
ST
2023+
TO-220
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
ST/意法
23+
TO-220
10000
公司只做原裝正品
 詢價
ST/意法
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ST/意法
2022+
TO-220
12888
原廠代理 終端免費提供樣品
 詢價
更多BDT61供應(yīng)商 更新時間2025-1-18 16:00:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多