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BD909

POWER TRANSISTORS(15A,90W)

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導體股份有限公司

BD909

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION TheBD909andBD911aresiliconEpitaxial-BaseNPNpowertransistorsmountedinJedecTO-220plasticpackage.Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareBD910andBD912respectively. ■STMicroelectronicsPREFERREDSALESTYPES

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

BD909

Silicon NPN Power Transistors

DESCRIPTION ?WithTO-220Cpackage ?ComplementtotypeBD910BD912 APPLICATIONS ?Intentedforuseinpowerlinearandswitchingapplications

SAVANTIC

Savantic, Inc.

BD909

Silicon NPN Power Transistors

DESCRIPTION ?WithTO-220Cpackage ?ComplementtotypeBD910BD912 APPLICATIONS ?Intentedforuseinpowerlinearandswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BD909

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

bocaBoca Semiconductor Corporation

博卡博卡半導體公司

BD909

SILICON POWER TRANSISTORS

SILICONPOWERTRANSISTORS TheBD909andDB911,aresiliconepitaxial-baseNPNpowertransistorsinaTO-220 envelope.Theyareintendedforuseinpowerlinearandswitchingapplications. CompliancetoRoHS.

COMSET

Comset Semiconductor

BD909

PLASTIC POWER TRANSISTORS

PowerLinearandSwitchingApplications

CDIL

Continental Device India Limited

BD909

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

BD909

Silicon NPN Power Transistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

BD909NPN

PLASTIC POWER TRANSISTORS

PowerLinearandSwitchingApplications

CDIL

Continental Device India Limited

BF909

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES ?Sp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BF909

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES ?Sp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF909

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BF909A

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BF909AR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BF909AWR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BF909R

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES ?Sp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BF909R

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES ?Sp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF909R

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BF909WR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

晶體管資料

  • 型號:

    BD909

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    低頻或音頻放大 (LF)_功率放大 (L)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    80V

  • 最大電流允許值:

    15A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號:

    BD545B,BD743B,3DD68C,

  • 最大耗散功率:

    90W

  • 放大倍數(shù):

  • 圖片代號:

    B-10

  • vtest:

    80

  • htest:

    999900

  • atest:

    15

  • wtest:

    90

詳細參數(shù)

  • 型號:

    BD909

  • 功能描述:

    兩極晶體管 - BJT NPN Power Switching

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    PNP 集電極—基極電壓

  • VCBO:

    集電極—發(fā)射極最大電壓

  • VCEO:

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO:

    - 6 V

  • 增益帶寬產(chǎn)品fT:

    直流集電極/Base Gain hfe

  • Min:

    100 A

  • 安裝風格:

    SMD/SMT

  • 封裝/箱體:

    PowerFLAT 2 x 2

供應商型號品牌批號封裝庫存備注價格
CDL
05+
原廠原裝
1851
只做全新原裝真實現(xiàn)貨供應
詢價
24+
TO-220
10000
全新
詢價
ST
23+
TO-220
5000
原裝正品,假一罰十
詢價
ST
16+
原廠封裝
3050
原裝現(xiàn)貨假一罰十
詢價
ST
24+
TO-220
15000
原裝現(xiàn)貨熱賣
詢價
ST/進口原
17+
TO-220
6200
詢價
ST
16+
TO-220
10000
全新原裝現(xiàn)貨
詢價
ST/進口原
24+
TO-220
5000
只做原裝公司現(xiàn)貨
詢價
BOCA
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
ST
23+
TO-220
5000
專做原裝正品,假一罰百!
詢價
更多BD909供應商 更新時間2024-12-26 15:48:00