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BFC520

NPNwidebandcascodetransistor

DESCRIPTION Cascodeamplifierwithtwodiscretediesinasurfacemount,5-pinSOT353(S-mini)package.TheamplifierisprimarilyintendedforlowpowerRFcommunicationsequipment,suchaspagersandcordlessphonesandhasaverylowfeedbackcapacitanceresultinginhighisolation. FEATURES

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFE520

NPNwidebanddifferentialtransistor

DESCRIPTION EmittercoupleddualNPNsiliconRFtransistorinasurfacemount5-pinSOT353(S-mini)package.ThetransistorisprimarilyintendedforapplicationsintheRFfrontendasabalancedmixer,adifferentialamplifierinanaloganddigitalcellularphones,andincordlessphones,pager

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG520

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforapplicationsintheRFfrontendintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,pagersandsatelliteTVtuners(SATV)andrepeateramplifiersinfibre-

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG520

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforapplicationsintheRFfrontendintheGHzrange, suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,pagersandsatelliteTVtuners(SATV)andrepeateramplifiersinfibre

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG520

iscSiliconNPNRFTransistor

DESCRIPTION ?LowNoiseFigure NF=1.3dBTYP.@VCE=8V,IC=10mA,f=900MHz ?HighGain ︱S21︱2=16dBTYP.@VCE=8V,IC=40mA,f=900MHz ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Designedforuseinlownoise,h

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BFG520

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG520

iscSiliconNPNRFTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BFG520/X

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforapplicationsintheRFfrontendintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,pagersandsatelliteTVtuners(SATV)andrepeateramplifiersinfibre-

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG520/X

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforapplicationsintheRFfrontendintheGHzrange, suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,pagersandsatelliteTVtuners(SATV)andrepeateramplifiersinfibre

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG520/XR

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforapplicationsintheRFfrontendintheGHzrange, suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,pagersandsatelliteTVtuners(SATV)andrepeateramplifiersinfibre

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

晶體管資料

  • 型號:

    BD520(-1,-5)

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-PNP

  • 性質(zhì):

    低頻或音頻放大 (LF)_功率放大 (L)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    80V

  • 最大電流允許值:

    2A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號:

    BD528,3CA5C,

  • 最大耗散功率:

    10W

  • 放大倍數(shù):

  • 圖片代號:

    A-61

  • vtest:

    80

  • htest:

    999900

  • atest:

    2

  • wtest:

    10

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PANJIT
21+
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24000
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PANJIT
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10000
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50000
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50000
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PANJIT/強茂
2022
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80000
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PANJIT
TO-252
22+
6000
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PANJIT
TO-252
68900
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16+
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21000
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TOSHIBA
2022+
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6000
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23+
NA/
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更多BD520(-1,-5)供應(yīng)商 更新時間2025-1-27 17:26:00