| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
BD249B | Silicon NPN Power Transistor DESCRIPTION ?CollectorCurrent-lc=25A ?Collector-EmitterBreakdownVoltage- :V(BR)CEO=45V(Min)-BD249;60V(Min)-BD249A 80V(Min)-BD249B;100V(Min)-BD249C ?ComplementtoTypeBD250/A/B/C APPLICATIONS ?Designedforuseingeneralpurposepoweramplifie | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | |
BD249B | POWER TRANSISTORS(25A,125W) COMPLEMENTARYSILICONHIGH-POWERTRANSISTORS | MOSPECMospec Semiconductor 統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司 | MOSPEC | |
BD249B | NPN SILICON POWER TRANSISTORS ●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | POINN Power Innovations Ltd | POINN | |
BD249B | NPN SILICON POWER TRANSISTORS NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | BournsBourns Electronic Solutions 伯恩斯 | Bourns | |
BD249B | Silicon NPN Power Transistors DESCRIPTION ·WithTO-3PNpackage ·ComplementtotypeBD250/A/B/C ·125Wat25°Ccasetemperature ·25Acontinuouscollectorcurrent | SAVANTIC Savantic, Inc. | SAVANTIC | |
BD249B | Silicon NPN Power Transistors DESCRIPTION ·WithTO-3PNpackage ·ComplementtotypeBD250/A/B/C ·125Wat25°Ccasetemperature ·25Acontinuouscollectorcurrent | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
BD249B | NPN SILICON POWER TRANSISTORS NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | BournsBourns Electronic Solutions 伯恩斯 | Bourns | |
BD249B | Silicon NPN Power Transistors | SAVANTIC Savantic, Inc. | SAVANTIC | |
包裝：管件 封裝/外殼：TO-218-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 80V 25A SOT93 | Bourns Inc. Bourns Inc. | Bourns Inc. | ||
NPNSILICONPOWERTRANSISTORS NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
POWERTRANSISTORS(25A,125W) COMPLEMENTARYSILICONHIGH-POWERTRANSISTORS | MOSPECMospec Semiconductor 統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司 | MOSPEC | ||
NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | POINN Power Innovations Ltd | POINN | ||
NPNHigh??owerTransistor NPNHigh?PowerTransistor NPNhigh?powertransistorsareforgeneral?purposepoweramplifierandswitchingapplications. Features ?ESDRatings:MachineModel,C;>400V HumanBodyModel,3B;>8000V ?EpoxyMeetsUL94V?0@0.125 ?Pb?FreePackageisAvailable* | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·ComplementtotypeBD250/A/B/C ·125Wat25°Ccasetemperature ·25Acontinuouscollectorcurrent | SAVANTIC Savantic, Inc. | SAVANTIC | ||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·ComplementtotypeBD250/A/B/C ·125Wat25°Ccasetemperature ·25Acontinuouscollectorcurrent | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
SiliconNPNPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
NPNSILICONPOWERTRANSISTORS NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
SiliconNPNPowerTransistor DESCRIPTION ?CollectorCurrent-lc=25A ?Collector-EmitterBreakdownVoltage- :V(BR)CEO=45V(Min)-BD249;60V(Min)-BD249A 80V(Min)-BD249B;100V(Min)-BD249C ?ComplementtoTypeBD250/A/B/C APPLICATIONS ?Designedforuseingeneralpurposepoweramplifie | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
NPNHigh??owerTransistor NPNHigh?PowerTransistor NPNhigh?powertransistorsareforgeneral?purposepoweramplifierandswitchingapplications. Features ?ESDRatings:MachineModel,C;>400V HumanBodyModel,3B;>8000V ?EpoxyMeetsUL94V?0@0.125 ?Pb?FreePackageisAvailable* | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
NPNSILICONPOWERTRANSISTORS NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | BournsBourns Electronic Solutions 伯恩斯 | Bourns |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
低頻或音頻放大 （LF）_功率放大 （L）
- 封裝形式：
直插封裝
- 極限工作電壓：
80V
- 最大電流允許值：
25A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
BD257/80,TIP35B,3DD71C,
- 最大耗散功率：
125W
- 放大倍數(shù)：
- 圖片代號：
B-62
- vtest：
80
- htest：
999900
- atest：
25
- wtest：
125
詳細(xì)參數(shù)
- 型號：
BD249B
- 功能描述：
兩極晶體管 - BJT 125W NPN Silicon
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
PNP 集電極—基極電壓
- VCBO：
集電極—發(fā)射極最大電壓
- VCEO：
- 40 V 發(fā)射極 - 基極電壓
- VEBO：
- 6 V
- 增益帶寬產(chǎn)品fT：
直流集電極/Base Gain hfe
- Min：
100 A
- 安裝風(fēng)格：
SMD/SMT
- 封裝/箱體：
PowerFLAT 2 x 2
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+ |
TO-3PN |
10000 |
全新 |
詢價 | |||
MOT |
2020+ |
TO-247 |
25 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
ST |
24+ |
TO-218 |
15000 |
原裝現(xiàn)貨熱賣 |
詢價 | ||
BOURNS |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費送樣 |
詢價 | ||
FAIRCHI |
21+ |
TO-3P |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | ||
MOT |
2021++ |
原廠原裝 |
5850 |
ELE優(yōu)勢庫存國外貨源 |
詢價 | ||
ST/意法 |
23+ |
TO-3P |
16330 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳 |
詢價 | ||
N/A |
23+ |
原廠封裝 |
5177 |
現(xiàn)貨 |
詢價 | ||
MOTOROLA/摩托羅拉 |
23+ |
TO-247 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
MOTOROLA/摩托羅拉 |
2022 |
TO-247 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 |
