| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
BD246B | PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS PNPSINGLE-DIFFUSEDMESASILICONPOWERTRANSISTORS TheBD246seriesarePNPpowertransistorsinaTO3PNenvelope. Theyarethepowertransistorsforpoweramplifierandhigh-speed-switchingapplications. ThecomplementaryisBD245,A,B,C CompliancetoRoHS. | COMSET Comset Semiconductor | COMSET | |
BD246B | Silicon PNP Power Transistor DESCRIPTION ?CollectorCurrent-IC=-10A ?Collector-EmitterBreakdownVoltage- :V(BR)CEO=-45V(Min)-BD246;-60V(Min)-BD246A -80V(Min)-BD246B;-100V(Min)-BD246C ?ComplementtoTypeBD245/A/B/C APPLICATIONS ?Designedforuseingeneralpurposepoweramp | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | |
BD246B | PNP SILICON POWER TRANSISTORS ●DesignedforComplementaryUsewiththeBD245Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | POINN Power Innovations Ltd | POINN | |
BD246B | PNP SILICON POWER TRANSISTORS PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD245Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | TRSYS Transys Electronics | TRSYS | |
BD246B | PNP SILICON POWER TRANSISTORS ●DesignedforComplementaryUsewiththeBD245Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | BournsBourns Electronic Solutions 伯恩斯 | Bourns | |
BD246B | Silicon PNP Power Transistors DESCRIPTION ?WithTO-3PNpackage ?ComplementtotypeBD249/A/B/C ?125Wat25°Ccasetemperature ?25Acontinuouscollectorcurrent | SAVANTIC Savantic, Inc. | SAVANTIC | |
BD246B | isc Silicon PNP Power Transistor DESCRIPTION ?WithTO-3PNpackage ?ComplementtotypeBD249/A/B/C ?125Wat25°Ccasetemperature ?25Acontinuouscollectorcurrent | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | |
BD246B | Silicon NPN Power Transistors | SAVANTIC Savantic, Inc. | SAVANTIC | |
包裝：管件 封裝/外殼：TO-218-3 類(lèi)別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個(gè) 描述：TRANS PNP 80V 10A SOT93 | Bourns Inc. Bourns Inc. | Bourns Inc. | ||
PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD245Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | POINN Power Innovations Ltd | POINN | ||
PNPSILICONPOWERTRANSISTORS PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD245Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | TRSYS Transys Electronics | TRSYS | ||
PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD245Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
SiliconPNPPowerTransistors DESCRIPTION ?WithTO-3PNpackage ?ComplementtotypeBD249/A/B/C ?125Wat25°Ccasetemperature ?25Acontinuouscollectorcurrent | SAVANTIC Savantic, Inc. | SAVANTIC | ||
PNPSINGLE-DIFFUSEDMESASILICONPOWERTRANSISTORS PNPSINGLE-DIFFUSEDMESASILICONPOWERTRANSISTORS TheBD246seriesarePNPpowertransistorsinaTO3PNenvelope. Theyarethepowertransistorsforpoweramplifierandhigh-speed-switchingapplications. ThecomplementaryisBD245,A,B,C CompliancetoRoHS. | COMSET Comset Semiconductor | COMSET | ||
SiliconNPNPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
iscSiliconPNPPowerTransistor DESCRIPTION ?WithTO-3PNpackage ?ComplementtotypeBD249/A/B/C ?125Wat25°Ccasetemperature ?25Acontinuouscollectorcurrent | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分類(lèi)制造商etc2未分類(lèi)制造商 | etc2 | ||
SiliconPNPPowerTransistor DESCRIPTION ?CollectorCurrent-IC=-10A ?Collector-EmitterBreakdownVoltage- :V(BR)CEO=-45V(Min)-BD246;-60V(Min)-BD246A -80V(Min)-BD246B;-100V(Min)-BD246C ?ComplementtoTypeBD245/A/B/C APPLICATIONS ?Designedforuseingeneralpurposepoweramp | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
N-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORS
| SIEMENSSiemens Semiconductor Group 西門(mén)子德國(guó)西門(mén)子股份公司 | SIEMENS | ||
N-channelsiliconjunctionfield-effecttransistors DESCRIPTION GeneralpurposeN-channelsymmetricalsiliconjunctionfield-effecttransistorsinaplasticTO-92variantpackage. FEATURES ?Interchangeabilityofdrainandsourceconnections ?HighIDSSrange ?Frequencyupto450MHz. APPLICATIONS ?VHFandUHFamplifiers | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips |
晶體管資料
- 型號(hào)：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠(chǎng)家：
- 制作材料：
Si-PNP
- 性質(zhì)：
低頻或音頻放大 （LF）_功率放大 （L）
- 封裝形式：
直插封裝
- 極限工作電壓：
80V
- 最大電流允許值：
10A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號(hào)：
BD250B,BD214/80,BD258/80,TIP34B,3CD10C,
- 最大耗散功率：
80W
- 放大倍數(shù)：
- 圖片代號(hào)：
B-62
- vtest：
80
- htest：
999900
- atest：
10
- wtest：
80
詳細(xì)參數(shù)
- 型號(hào)：
BD246B
- 功能描述：
兩極晶體管 - BJT 80W PNP Silicon
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
PNP 集電極—基極電壓
- VCBO：
集電極—發(fā)射極最大電壓
- VCEO：
- 40 V 發(fā)射極 - 基極電壓
- VEBO：
- 6 V
- 增益帶寬產(chǎn)品fT：
直流集電極/Base Gain hfe
- Min：
100 A
- 安裝風(fēng)格：
SMD/SMT
- 封裝/箱體：
PowerFLAT 2 x 2
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
24+ |
TO-3PN |
10000 |
全新 |
詢(xún)價(jià) | |||
ST |
24+ |
TO-218 |
15000 |
原裝現(xiàn)貨熱賣(mài) |
詢(xún)價(jià) | ||
BOURNS |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠(chǎng)免費(fèi)送樣 |
詢(xún)價(jià) | ||
ST |
1738+ |
TO-3P |
8529 |
科恒偉業(yè)!只做原裝正品,假一賠十! |
詢(xún)價(jià) | ||
ST/意法 |
23+ |
TO-3P |
10000 |
公司只做原裝正品 |
詢(xún)價(jià) | ||
ST |
22+ |
TO-3P |
6000 |
十年配單,只做原裝 |
詢(xún)價(jià) | ||
bourns |
24+ |
500000 |
行業(yè)低價(jià),代理渠道 |
詢(xún)價(jià) | |||
N/A |
23+ |
原廠(chǎng)封裝 |
5177 |
現(xiàn)貨 |
詢(xún)價(jià) | ||
ST |
22+ |
TO-3P |
16900 |
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持! |
詢(xún)價(jià) | ||
ST |
22+ |
TO-3P |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單 |
詢(xún)價(jià) |
