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BF410A

N-channelsiliconfield-effecttransistors

DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF410B

N-channelsiliconfield-effecttransistors

DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF410B

LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS

Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BF410C

LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS

Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BF410C

N-channelsiliconfield-effecttransistors

DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF410D

N-channelsiliconfield-effecttransistors

DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF410D

LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS

Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFG410

NPN22GHzwidebandtransistor

DESCRIPTION NPNdoublepolysiliconwidebandtransistorwithburiedlayerforlowvoltageapplicationsinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES ?Veryhighpowergain ?Lownoisefigure ?Hightransitionfrequency ?Emitteristhermallead ?Lowfeedbackcapacitance. APPLI

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG410W

NPN22GHzwidebandtransistor

DESCRIPTION NPNdoublepolysiliconwidebandtransistorwithburiedlayerforlowvoltageapplicationsinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES ?Veryhighpowergain ?Lownoisefigure ?Hightransitionfrequency ?Emitteristhermallead ?Lowfeedbackcapacitance. APPLI

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG410W

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    BCR410

  • 制造商：

    INFINEON

  • 制造商全稱：

    Infineon Technologies AG

  • 功能描述：

    Active Bias Controller

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價
INFINEON
23+
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
INFINEON
23+
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
INFINEON
23+
7000
詢價
INFINEON
17+
SOT343
6200
100%原裝正品現(xiàn)貨
 詢價
INF
24+
6000
詢價
INFINEON
2016+
SOT343-4
5405
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
Infineon
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
 詢價
INFINEON
2018+
SOT343
11256
只做進(jìn)口原裝正品!假一賠十!
 詢價
INFINEON
25+23+
SOT343
20280
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價
更多BCR410供應(yīng)商 更新時間2025-4-17 9:00:00

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