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CED4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-40V,-20A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-40V,-20A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -40V,-20A,RDS(ON)=42mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=65mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-40V,-6A,RDS(ON)=42m?@VGS=-10V. RDS(ON)=65m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-40V,-6.3A,RDS(ON)=44m?@VGS=-10V. RDS(ON)=68m?@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-40V,-20A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -40V,-20A,RDS(ON)=42mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=65mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CHM4301PAPT

P-ChannelEnhancementModeFieldEffectTransistor

CHENMKOchenmko

力勤股份有限公司

CHM4301ZPT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE40VoltsCURRENT6.3Ampere FEATURE *Smallflatpackage.(SC-73/SOT-223) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplicat

CHENMKOchenmko

力勤股份有限公司

CST-4301E

0.4InchTriadDigitsDisplay

CHINASEMI

China Semiconductor Corporation

CST-4301G

0.4InchTriadDigitsDisplay

CHINASEMI

China Semiconductor Corporation

CST-4301S

0.4InchTriadDigitsDisplay

CHINASEMI

China Semiconductor Corporation

DS4301

Nonvolatile,32-PositionDigitalPotentiometer

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS4301

Nonvolatile,32-PositionDigitalPotentiometer

MaximMaxim Integrated Products

美信美信半導(dǎo)體

EC4301C

P-ChannelSiliconMOSFETSmallSignalSwitchandInterfaceApplications

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

EC4301C

SmallSignalSwitchandInterfaceApplications

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

FCS-4301

PTZDomeNetworkCamera

LVL1

Level One

FJN4301R

PNPEpitaxialSiliconTransistor

SwitchingApplication(BiasResistorBuiltIn) ?Switchingcircuit,Inverter,Interfacecircuit,DriverCircuit ?BuiltinbiasResistor(R1=4.7K?,R2=4.7K?) ?ComplementtoFJN3301R

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

GXO-4301

LowPowerCMOSOscillator

GOLLEDGE

Golledge Electronics Ltd

GXO-4301

LowPowerCMOSOscillator

GOLLEDGE

Golledge Electronics Ltd

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7512
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62
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3600
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BROADCOM
02/03+
BGA
95
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BROADCOM
16+
QFP
4000
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BROADCOM
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TQFP1414
21322
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BROADCOM
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更多BCM4301供應(yīng)商 更新時(shí)間2024-12-22 10:50:00