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BC849S

SurfaceMountGeneralPurposeSi-Epi-PlanarDouble-Transistors

Diotec

Diotec Semiconductor

BC849S

SMDGeneralPurposeDualNPNTransistors

Diotec

Diotec Semiconductor

BC849S-B

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon ?MoistureSensitivityLevel:1 ?ESDRating–HumanBodyModel:>4000V –MachineModel:>400V

FS

First Silicon Co., Ltd

BC849S-C

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon ?MoistureSensitivityLevel:1 ?ESDRating–HumanBodyModel:>4000V –MachineModel:>400V

FS

First Silicon Co., Ltd

BC849T

NPNSiliconAFTransistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes: BC856T,BC857T, BC858T,BC859T,BC860T

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BC849W

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinaSOT323plasticpackage. PNPcomplements:BC859WandBC860W. FEATURES ?Lowcurrent(max.100mA) ?Lowvoltage(max.45V). APPLICATIONS ?Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BC849W

NPNGENERALPURPOSETRANSISTORS

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

BC849W

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors

Diotec

Diotec Semiconductor

BC849W

NPNSiliconAFTransistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856W,BC857W,BC858W,BC859W,BC860W(PNP)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BC849W

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors ?Powerdissipation200mW ?PlasticcaseSOT-323 ?Weightapprox.0.01g ?PlasticmaterialhasULclassification94V-0 ?Standardpackagingtapedandreeled

Diotec

Diotec Semiconductor

BC849W

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinaSOT323plasticpackage. PNPcomplements:BC859WandBC860W. FEATURES ?Lowcurrent(max.100mA) ?Lowvoltage(max.45V). APPLICATIONS ?Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BC849W

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forgeneralpurposeandswitchingapplications

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導(dǎo)體先之科半導(dǎo)體科技(東莞)有限公司

BC849W

NPNTransistors

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

BC849W

NPNgeneralpurposetransistors

FEATURES ?Lowcurrent(max.100mA) ?Lowvoltage(max.45V).

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BC849W

NPNSiliconEpitaxialPlanarTransistor

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BF849

PNPSILICONRFTRANSISTORS

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BT849AKPF

Single-ChipVideoCaptureforPCI

[Conexant] Bt848isacomplete,lowcostsingle-chipsolutionforanalogNTSC/PAL/SECAMvideocaptureonthePCIbus.Asabusmaster,Bt848doesnotrequireanylocalmemorybufferstostorevideopixeldatawhichsignificantlyminimizesthehardwarecostforthisarchitecture.Bt848takesa

ETCList of Unclassifed Manufacturers

未分類制造商

FZT849

NPNSILICONPLANARHIGHCURRENT(HIGHPERFORMANCE)TRANSISTOR

FEATURES *Extremelylowequivalenton-resistance;RCE(sat)36m?at5A *7Ampcontinuouscollectorcurrent(20Amppeak) *Verylowsaturationvoltages *Excellentgaincharateristicsspecifiedupto20Amp *Ptot=3Watts

Zetex

Zetex Semiconductors

FZT849

NPNSiliconPlanarHighCurrent(HighPerformance)Transistor

Features ●Extremelylowequivalenton-resistance;RCE(sat)36mΩat5A. ●7Ampcontinuouscollectorcurrent(20Amppeak). ●Verylowsaturationvoltages. ●Excellentgaincharateristicsspecifiedupto20Amp. ●Ptot=3Watts.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

FZT849

SOT223NPNSILICONPLANARHIGHCURRENT

FEATURES *Extremelylowequivalenton-resistance;RCE(sat)36m?at5A *7Ampcontinuouscollectorcurrent(20Amppeak) *Verylowsaturationvoltages *Excellentgaincharateristicsspecifiedupto20Amp *Ptot=3Watts

DIODES

Diodes Incorporated

晶體管資料

  • 型號:

    BC849R

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    低噪放大 (ra)

  • 封裝形式:

    貼片封裝

  • 極限工作電壓:

    30V

  • 最大電流允許值:

    0.1A

  • 最大工作頻率:

    30MHZ

  • 引腳數(shù):

    3

  • 可代換的型號:

    BCF32,BCF32R,BCF33,BCF33R,BCF81,BCF81T,

  • 最大耗散功率:

  • 放大倍數(shù):

  • 圖片代號:

    H-15

  • vtest:

    30

  • htest:

    30000000

  • atest:

    0.1

  • wtest:

    0

供應(yīng)商型號品牌批號封裝庫存備注價格
2023+
SMD
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
長電
2020+
SOT-23
63000
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
詢價
INFINEON
23+
8000
只做原裝現(xiàn)貨
詢價
INFINEON
23+
7000
詢價
PHILIPS
16+
SOT-323
3000
原裝現(xiàn)貨假一罰十
詢價
SOT-323
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
詢價
PHILIPS
22+
SOT-323
3000
絕對全新原裝現(xiàn)貨
詢價
ST
22+
SOT-323
16900
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持!
詢價
PH
15+
SOT-323
6698
詢價
更多BC849R供應(yīng)商 更新時間2024-12-30 14:54:00