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| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
45V,100mANPN/NPNgeneral-purposetransistor Features *Lowcollectorcapacitance *Lowcollector-emittersaturationvoltage *Closelymatchedcurrentgain *Reducesnumberofcomponentsandboardspace *Nomutualinterferencebetweenthetransistors *AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
GeneralPurposeTransistors | FS First Silicon Co., Ltd | FS | ||
NPNgeneralpurposetransistors DESCRIPTION NPNtransistorencapsulatedinanultrasmallSC-89(SOT490)plasticSMDpackage. PNPcomplements:BC856F,BC857FandBC858Fseries. FEATURES ?PowerdissipationcomparabletoSOT23 ?Lowcurrent(max.100mA) ?Lowvoltage(max.65V). APPLICATIONS ?Generalpurposeswitching | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPNSiliconTransistor(GeneralpurposeapplicationSwitchingapplication) Descriptions ?Generalpurposeapplication ?Switchingapplication Features ?Highvoltage:VCEO=45V ?ComplementarypairwithBC857F | AUK AUK corp | AUK | ||
NPNgeneralpurposetransistors DESCRIPTION NPNgeneralpurposetransistorinaSOT883leadlessultrasmallplasticpackage. PNPcomplement:BC857Mseries. FEATURES ?Leadlessultrasmallplasticpackage(1mm×0.6mm×0.5mm) ?Boardspace1.3×0.9mm ?PowerdissipationcomparabletoSOT23. APPLICATIONS ?Generalpu | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
COMPLEMENTARYPAIRSMALLSIGNALSURFACEMOUNTTRANSISTOR Features ?EpitaxialDieConstruction ?TwoInternallyIsolatedNPN/PNPTransistorsinOnePackage ?IdealforMediumPowerAmplificationandSwitching ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.GreenDevi | DIODESDiodes Incorporated 美臺半導(dǎo)體 | DIODES | ||
NPN/PNPSiliconAFTransistorArray NPN/PNPSiliconAFTransistorArrays ?ForAFinputstageanddriverapplications ?Highcurrentgain ?Lowcollector-emittersaturationvoltage ?Two(galvanic)internalisolatedNPN/PNP transistorinonepackage ?Pb-free(RoHScompliant)package ?QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
COMPLEMENTARYPAIRSMALLSIGNALSURFACEMOUNTTRANSISTOR | DIODESDiodes Incorporated 美臺半導(dǎo)體 | DIODES | ||
ComplementarySurfaceMountGeneralPurposeSi-PlanarTransistors Features TwocomplementarytransistorsinonepackageGeneralPurpose ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Signalprocessing,Switching,Amplification Commercialgrade1) MechanicalData1) Tapedandreeled3000/7“ Weightapprox.0.01 | DiotecDiotec Semiconductor 德歐泰克 | Diotec | ||
Multi-ChipTransistor FEATURE ?EpitaxialDieConstruction ?TwointernalisolatedNPN/PNPtransistorsinonepackage ?PowerDissipation PCM:0.2W(Temp.=25?C) ?CollectorCurrent ICM:0.1A ?Collector-baseVoltage V(BR)CBO:50/-50V ?Operating&StorageJunctionTemperature TJ,TSTG: | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS |
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