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BC846W-G

SmallSignalTransistor

Features -Powerdissipation PCM:0.15W(@TA=25°C) -Collectorcurrent ICM:0.1A -Collector-basevoltage VCBO:BC846W=80V BC847W=50V BC848W=30V

COMCHIPComchip Technology

典琦典琦科技股份有限公司

BC846W-Q

65V,100mANPNgeneral-purposetransistors

1.Generaldescription NPNgeneral-purposetransistorsinaverysmallSOT323(SC-70)Surface-MountedDevice(SMD) plasticpackage. Table1.Productoverview TypenumberPackage NexperiaJEDEC PNPcomplement BC846W-QBC856W-Q BC846AW-QBC856AW-Q BC846BW-Q SOT323SC-70 BC856BW-Q 2.Fe

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BC846X

65V,100mANPNgeneral-purposetransistors

Featuresandbenefits ?General-purposetransistors ?SMDplasticpackage ?Twodifferentgainselections

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BC846X

65V,100mANPNgeneral-purposetransistors

Featuresandbenefits ?General-purposetransistors ?SMDplasticpackage ?Twodifferentgainselections

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BC846X_SER

65V,100mANPNgeneral-purposetransistors

Featuresandbenefits ?General-purposetransistors ?SMDplasticpackage ?Twodifferentgainselections

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BC846XDW

Plastic-EncapsulateTransistors

FEATURES Twotransistorsinonepackage Reducesnumberofcomponentsandboardspace Nomutualinterferencebetweenthetransistors

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BC846X-Q

65V,100mANPNgeneral-purposetransistors

Featuresandbenefits ?General-purposetransistors ?SMDplasticpackages ?Twodifferentgainselections ?QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BC846X-Q_SER

65V,100mANPNgeneral-purposetransistors

Featuresandbenefits ?General-purposetransistors ?SMDplasticpackages ?Twodifferentgainselections ?QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BC846XQB

65V,100mANPNgeneral-purposetransistor

Featuresandbenefits ?Highpowerdissipationcapability ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint ?SmallerfootprintcomparedtoconventionalleadedSMDpackages ?Lowpackageheightof0.5mm

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BC846XQB_SER

65V,100mANPNgeneral-purposetransistor

Featuresandbenefits ?Highpowerdissipationcapability ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint ?SmallerfootprintcomparedtoconventionalleadedSMDpackages ?Lowpackageheightof0.5mm

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BC846XQB_SER

65V,100mANPNgeneral-purposetransistor

Featuresandbenefits ?Highpowerdissipationcapability ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint ?SmallerfootprintcomparedtoconventionalleadedSMDpackages ?Lowpackageheightof0.5mm

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BC846XQB-Q

65V,100mANPNgeneral-purposetransistor

Featuresandbenefits ?Highpowerdissipationcapability ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint ?SmallerfootprintcomparedtoconventionalleadedSMDpackages ?Lowpackageheightof0.5mm ?QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotivea

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BC846XQB-Q_SER

65V,100mANPNgeneral-purposetransistor

Featuresandbenefits ?Highpowerdissipationcapability ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint ?SmallerfootprintcomparedtoconventionalleadedSMDpackages ?Lowpackageheightof0.5mm ?QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotivea

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BC846XQB-Q_SER

65V,100mANPNgeneral-purposetransistor

Featuresandbenefits ?Highpowerdissipationcapability ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint ?SmallerfootprintcomparedtoconventionalleadedSMDpackages ?Lowpackageheightof0.5mm ?QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotivea

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BC846XQC

65V,100mANPNgeneral-purposetransistor

Featuresandbenefits ?Highpowerdissipationcapability ?Highvoltage(max.65V) ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint ?SmallerfootprintcomparedtoconventionalleadedSMDpackages ?Lowpackageheightof0.5mm ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BC846XQC

65V,100mANPNgeneral-purposetransistor

Featuresandbenefits ?Highpowerdissipationcapability ?Highvoltage(max.65V) ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint ?SmallerfootprintcomparedtoconventionalleadedSMDpackages ?Lowpackageheightof0.5mm ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BC846XQC_SER

65V,100mANPNgeneral-purposetransistor

Featuresandbenefits ?Highpowerdissipationcapability ?Highvoltage(max.65V) ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint ?SmallerfootprintcomparedtoconventionalleadedSMDpackages ?Lowpackageheightof0.5mm ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BC846XQC_SER

65V,100mANPNgeneral-purposetransistor

Featuresandbenefits ?Highpowerdissipationcapability ?Highvoltage(max.65V) ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint ?SmallerfootprintcomparedtoconventionalleadedSMDpackages ?Lowpackageheightof0.5mm ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BC846XQC-Q

65V,100mANPNgeneral-purposetransistor

Featuresandbenefits ?Highpowerdissipationcapability ?Highvoltage(max.65V) ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint ?SmallerfootprintcomparedtoconventionalleadedSMDpackages ?Lowpackageheightof0.5mm ?QualifiedaccordingtoAEC-Q101andrecomme

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BC846XQC-Q_SER

65V,100mANPNgeneral-purposetransistor

Featuresandbenefits ?Highpowerdissipationcapability ?Highvoltage(max.65V) ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint ?SmallerfootprintcomparedtoconventionalleadedSMDpackages ?Lowpackageheightof0.5mm ?QualifiedaccordingtoAEC-Q101andrecomme

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    BC846W T/R

  • 功能描述:

    兩極晶體管 - BJT TRANS GP TAPE-7

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    PNP 集電極—基極電壓

  • VCBO:

    集電極—發(fā)射極最大電壓

  • VCEO:

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO:

    - 6 V

  • 增益帶寬產(chǎn)品fT:

    直流集電極/Base Gain hfe

  • Min:

    100 A

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    PowerFLAT 2 x 2

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更多BC846W T/R供應(yīng)商 更新時(shí)間2024-12-26 19:07:00