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BC237TFR

包裝：散裝 封裝/外殼：TO-226-3，TO-92-3（TO-226AA）成形引線 類別：分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 45V 0.1A TO92-3

ONSEMION Semiconductor

安森美半導體安森美半導體公司

BD237

TO-126Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltageV(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

BD237

MediumPowerLinearandSwitchingApplications

MediumPowerLinearandSwitchingApplications ?ComplementtoBD234/236/238respectively

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

BD237

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION TheBD235andBD237aresiliconepitaxial-baseNPNpowertransistorsinJedecSOT-32plasticpackageintededforuseinmediumpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareBD236andBD238respectively. ■SGS-THOMSONPREFERREDSALESTYPES

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

BD237

PlasticMediumPowerSiliconNPNTransistor

PlasticMediumPowerSiliconNPNTransistor ...designedforusein5.0to10Wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. ?DCCurrentGain—hFE=40(Min)@IC=0.15Adc

Motorola

Motorola, Inc

BD237

NPNEpitaxialPlanarTransistors

NPNEpitaxialPlanarTransistors P/bLead(Pb)-Free

WEITRON

Weitron Technology

BD237

SiliconNPNPowerTransistors

DESCRIPTION ?WithTO-126package ?ComplementtotypeBD234/236/238 APPLICATIONS ?Formediumpowerlinearandswitchingapplications

SAVANTIC

Savantic, Inc.

BD237

PlasticMediumPowerBipolarTransistors

PlasticMediumPowerBipolarTransistors Designedforusein5.0to10Waudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features ?DCCurrentGain?hFE=40(Min)@IC=0.15Adc ?EpoxyMeetsUL94V0@0.125in ?ESDRatings:HumanBodyModel,3B;>

ONSEMION Semiconductor

安森美半導體安森美半導體公司

BD237

SiliconNPNPowerTransistors

DESCRIPTION ?WithTO-126package ?ComplementtotypeBD234/236/238 APPLICATIONS ?Formediumpowerlinearandswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BD237

LowvoltageNPNpowertransistors

Description ThedevicesaremanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage.ThePNPtypeisBD238. Features ■Lowsaturationvoltage ■NPNtransistors Applications ■Audio,

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

BD237

COMPLEMENTARYSILICONPOWERTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

BD237

Plastic-EncapsulatedTransistors

TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltageV(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃

TEL

TRANSYS Electronics Limited

BD237

NPNpowertransistors

Description ThedevicesaremanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage.ThePNPtypesareBD236andBD238respectively. Features ■NPNtransistors Applications ■Audio,

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

BD237

TO-126Plastic-EncapsulateTransistors

FEATURES ComplementtoBD234/BD236/BD238respectively

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

BD237

80V,NPNTRANSISTORS

DESCRIPTION TheUTCBD237isanNPNtransistor.itusesUTC’sadvancedtechnologytoprovidecustomerswithhighcollector-emitterbreakdownvoltage,etc. FEATURES *ComplementtoUTCBD238respectively *Highcollector-emitterbreakdownvoltage

UTCUnisonic Technologies

友順友順科技股份有限公司

BD237

EPITAXIALSILICONPOWERTRANSISTORS

EPITAXIALSILICONPOWERTRANSISTORS IntendedforuseinMediumPowerLinearSwitchingApplications

CDIL

Continental Device India Limited

BD237

NPNPlastic-EncapsulateTransistors

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?PowerDissipation:PCM=1.25W,Ta=25°C ?CollectorCurrent:IC=2A ?ComplementtoBD234/236/238respectively ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?Epoxy

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

BD237

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION ?DCCurrentGain-:hFE=40(Min)@lc=0.15A ?ComplementtoTypeBD234/236/238 APPLICATIONS ?Designedforusein5-10wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

BD237

TRANSISTOR(NPN)

FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltage V(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實業(yè)深圳市永而佳實業(yè)有限公司

BD237

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號：

    BC237TFR

  • 制造商：

    onsemi

  • 類別：

    分立半導體產(chǎn)品 > 晶體管 - 雙極性晶體管（BJT）- 單個

  • 包裝：

    散裝

  • 晶體管類型：

    NPN

  • 不同?Ib、Ic 時?Vce 飽和壓降（最大值）：

    600mV @ 5mA，100mA

  • 電流 - 集電極截止（最大值）：

    15nA

  • 不同?Ic、Vce?時 DC 電流增益 (hFE)（最小值）：

    120 @ 2mA，5V

  • 頻率 - 躍遷：

    250MHz

  • 工作溫度：

    150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-226-3，TO-92-3（TO-226AA）成形引線

  • 供應商器件封裝：

    TO-92-3

  • 描述：

    TRANS NPN 45V 0.1A TO92-3

供應商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
24+
TO92
2000
原裝正品,假一罰十!
 詢價
FAIRCHILD
22+23+
TO92
48555
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
 詢價
FAIRCHILD
21+
TO92
2000
原裝現(xiàn)貨假一賠十
 詢價
FAIRCHILD/仙童
23+
TO92
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
FAIRCHILD/仙童
2022
TO92
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
FAIRCHILD
04+
TO92
2000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
ON Semiconductor
2022+
TO-92-3
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
Fairchild
23+
33500
詢價
FAIRCHILD/仙童
23+
NA/
5250
原裝現(xiàn)貨,當天可交貨,原型號開票
 詢價
FAIRCHILD
23+
TO92
10000
原裝正品現(xiàn)貨
 詢價
更多BC237TFR供應商 更新時間2024-11-7 15:26:00

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