| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
BC2306 | Plastic-Encapsulate MOSFETS FEATURE TrenchFETPowerMOSFET APPLICATION LoadSwitchforPortableDevices DC/DCConverter | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | |
N-Channel 30-V(D-S) MOSFET FEATURES ●PowerMOSFET ●100RgTested ●-CARforautomotiveandotherapplicationsrequiringuniquesiteand controlchangerequirements;AEC-Q101qualifiedandPPAPcapable. | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
MMDS/ISM/S-BandMixer [PacificWireless] Description TheC2306isaflexible,highintercept,frequencyconversionGaAsMMICpackagedina14pinSOICpackage.TheMMICisusableasanupconverterordownconvertermixer.EachsubcircuitisbroughtoutonseparatepinstoallowforcustomfilteringontheIF/RF | ETC1List of Unclassifed Manufacturers etc未分類(lèi)制造商未分類(lèi)制造商 | ETC1 | ||
MMDS/ISM/S-BandMixer [PacificWireless] Description TheC2306isaflexible,highintercept,frequencyconversionGaAsMMICpackagedina14pinSOICpackage.TheMMICisusableasanupconverterordownconvertermixer.EachsubcircuitisbroughtoutonseparatepinstoallowforcustomfilteringontheIF/RF | ETC1List of Unclassifed Manufacturers etc未分類(lèi)制造商未分類(lèi)制造商 | ETC1 | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 20V,4.1A,RDS(ON)=45mW@VGS=4.5V. RDS(ON)=55mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant. RDS(ON)=110mW@VGS=1.8V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■20V,3.6A,RDS(ON)=60mΩ@VGS=4.5V. RDS(ON)=70mΩ@VGS=2.5V. RDS(ON)=100mΩ@VGS=1.8V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 20V,4.1A,RDS(ON)=45mW@VGS=4.5V. RDS(ON)=55mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=110mW@VGS=1.8V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 20V,2.2A,RDS(ON)=45mW@VGS=4.5V. RDS(ON)=55mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-323package. RoHScompliant. RDS(ON)=110mW@VGS=1.8V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
SOT-23Plastic-EncapsulateMOSFETS | ZPSEMIZP Semiconductor 至尚臻品 | ZPSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MOT/ST/PH |
24+ |
CAN3 |
21322 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存! |
詢(xún)價(jià) | ||
CJ長(zhǎng)電/TD/BC藍(lán)彩 |
23+ |
SOT-23 |
90000 |
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋?kù)存,詳 |
詢(xún)價(jià) | ||
CHILISIN/奇力新 |
2022+ |
DIP |
51000 |
原廠代理 終端免費(fèi)提供樣品 |
詢(xún)價(jià) | ||
CHILISIN/奇力新 |
23+ |
DIP |
6800 |
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢(xún)價(jià) | ||
CHILISIN/奇力新 |
23+ |
DIP |
6800 |
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢(xún)價(jià) | ||
ON/ST |
24+ |
CAN3 |
450000 |
詢(xún)價(jià) | |||
PH |
24+ |
CAN |
6430 |
原裝現(xiàn)貨/歡迎來(lái)電咨詢(xún) |
詢(xún)價(jià) | ||
SEMITEH |
21+ |
4532 |
2000 |
原裝現(xiàn)貨假一賠十 |
詢(xún)價(jià) | ||
Semitehelec |
2021+ |
4532 |
2000 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢(xún)價(jià) | ||
SEMITEH |
20+ |
4532 |
2000 |
進(jìn)口原裝現(xiàn)貨,假一賠十 |
詢(xún)價(jià) |
