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BB503

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoise;NF=1.8dBtyp.atf=900MHz ?Highgain;PG=22dBtyp.atf=900MHz ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemini

HitachiHitachi Semiconductor

日立日立公司

BB503

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoise;NF=1.8dBtyp.atf=900MHz ?Highgain;PG=22dBtyp.atf=900MHz ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemini

HitachiHitachi Semiconductor

日立日立公司

BB503C

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoise;NF=1.8dBtyp.atf=900MHz ?Highgain;PG=22dBtyp.atf=900MHz ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemini

HitachiHitachi Semiconductor

日立日立公司

BB503C

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoise;NF=1.8dBtyp.atf=900MHz ?Highgain;PG=22dBtyp.atf=900MHz ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemini

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB503CCS-TL-E

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoise;NF=1.8dBtyp.atf=900MHz ?Highgain;PG=22dBtyp.atf=900MHz ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemini

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB503M

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoise;NF=1.8dBtyp.atf=900MHz ?Highgain;PG=22dBtyp.atf=900MHz ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemini

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB503M

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoise;NF=1.8dBtyp.atf=900MHz ?Highgain;PG=22dBtyp.atf=900MHz ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemini

HitachiHitachi Semiconductor

日立日立公司

BB503MCS-TL-E

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoise;NF=1.8dBtyp.atf=900MHz ?Highgain;PG=22dBtyp.atf=900MHz ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemini

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BC503

BA/BCSeries:1.5-6.0WattsSingleandDualOutputs

FEATURES ?InputπFilter ?FullyRegulatedOutputs ?IndustryStandardPinouts ?5,12,24,28,and48VDCInputs ?RippleandNoiseLessThan50mVpp ?Input/OutputIsolation

ETCList of Unclassifed Manufacturers

未分類制造商

BCR503

NPNSiliconDigitalTransistor(Switchingcircuit,inverter,interfacecircuit,drivecircuit)

NPNSiliconDigitalTransistor ?Switchingcircuit,inverter,interfacecircuit,drivecircuit ?Builtinbiasresistor(R1=2.2k?,R2=2.2k?)

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

詳細(xì)參數(shù)

  • 型號(hào)：

    BB503

  • 制造商：

    RENESAS

  • 制造商全稱：

    Renesas Technology Corp

  • 功能描述：

    Built in Biasing Circuit MOS FET IC UHF RF Amplifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
RENESAS/瑞薩
20+
SOT-23
120000
原裝正品 可含稅交易
 詢價(jià)
RENESAS/瑞薩
23+
SOT-23
360000
交期準(zhǔn)時(shí)服務(wù)周到
 詢價(jià)
renesas
24+
SOT-343
2550
詢價(jià)
HIT
02+
SOT23
2200
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
 詢價(jià)
RENESAS
2020+
MPAK-4
1076
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
HITACHI
23+
SOT143
7500
全新原裝優(yōu)勢(shì)
 詢價(jià)
HITACHI
2016+
SOT23
9000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
茂達(dá)
23+
SOT23-5
6000
原裝正品,假一罰十
 詢價(jià)
RENESAS
2016+
MPAK-4SOT
6523
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
 詢價(jià)
RENESAS
24+
MPAK-4SOT-1
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
更多BB503供應(yīng)商 更新時(shí)間2025-3-30 14:00:00

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