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BCL-410

CompressionStyleRingTongueTerminal

MOLEX4Molex Electronics Ltd.

莫仕

BCL-410-PL

CompressionStyleRingTongueTerminalfor4AWGWire,StudSize10,Plated

MOLEX4Molex Electronics Ltd.

莫仕

BCL-410-PL

CompressionStyleRingTongueTerminal

MOLEX4Molex Electronics Ltd.

莫仕

BCR410

ActiveBiasController

ActiveBiasController Characteristics ●Suppliesstablebiascurrentfrom1.8Voperatingvoltageon ●Lowvoltagedrop:110mVfor10mAcollectorcurrrent Applicationnotes ●StabilizingbiascurrentofNPNtransistorsandFETsfrom100μAto20mA ●IdealsupplementforSiegetandothertrans

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BCR410W

ActiveBiasController

ActiveBiasController Characteristics ●Suppliesstablebiascurrentfrom1.8Voperatingvoltageon ●Lowvoltagedrop:110mVfor10mAcollectorcurrrent Applicationnotes ●StabilizingbiascurrentofNPNtransistorsandFETsfrom100μAto20mA ●IdealsupplementforSiegetandothertrans

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BCR410W

ActiveBiasController

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BD410

NPNEPITAXIALSILICONPOWERTRANSISTOR

NPNEPITAXIALSILICONPOWERTRANSISTOR TO-126 PlasticPackage

CDIL

Continental Device India Limited

BD410

NPNEPITAXILASILICONPOWERTRANSISTORS

NPNEPITAXILASILICONPOWERTRANSISTORS TheyaresiliconepitaxialplanarNPNpowertransistorsmountedinaTO-126plasticpackage. AF-amplifierforhighsupplyvoltageTheyareintendedforcontrolcircuit,verticaloutputstagesinTVsets,andgeneralpurposeapplications.Complianceto

COMSET

Comset Semiconductor

BF410

LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS

Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.

SIEMENSSiemens Semiconductor Group

西門(mén)子德國(guó)西門(mén)子股份公司

BF410A

LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS

Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.

SIEMENSSiemens Semiconductor Group

西門(mén)子德國(guó)西門(mén)子股份公司

BF410A

N-channelsiliconfield-effecttransistors

DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF410B

N-channelsiliconfield-effecttransistors

DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF410B

LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS

Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.

SIEMENSSiemens Semiconductor Group

西門(mén)子德國(guó)西門(mén)子股份公司

BF410C

LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS

Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.

SIEMENSSiemens Semiconductor Group

西門(mén)子德國(guó)西門(mén)子股份公司

BF410C

N-channelsiliconfield-effecttransistors

DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF410D

N-channelsiliconfield-effecttransistors

DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF410D

LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS

Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.

SIEMENSSiemens Semiconductor Group

西門(mén)子德國(guó)西門(mén)子股份公司

BFG410

NPN22GHzwidebandtransistor

DESCRIPTION NPNdoublepolysiliconwidebandtransistorwithburiedlayerforlowvoltageapplicationsinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES ?Veryhighpowergain ?Lownoisefigure ?Hightransitionfrequency ?Emitteristhermallead ?Lowfeedbackcapacitance. APPLI

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG410W

NPN22GHzwidebandtransistor

DESCRIPTION NPNdoublepolysiliconwidebandtransistorwithburiedlayerforlowvoltageapplicationsinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES ?Veryhighpowergain ?Lownoisefigure ?Hightransitionfrequency ?Emitteristhermallead ?Lowfeedbackcapacitance. APPLI

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG410W

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào):

    BB410MV

  • 制造商:

    Thomas & Betts

  • 功能描述:

    B10 DBL Lock SYS 1XPG16-1/2

  • 功能描述:

    B10 DBL LOCK SYS 1XPG16-1/2

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BB
23+
8890
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BURR-BROWN
23+
DIP
29403
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BB
23+
原廠(chǎng)封裝
5177
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BB
2023+
CDIP
50000
原裝現(xiàn)貨
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BB
2023+
80000
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BURR-BROWN
23+
5000
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Eaton
22+
NA
168
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MOLEX
117305
全新原裝 貨期兩周
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NXP
23+
DO34
10000
原裝正品,假一罰十
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PHILIPS/飛利浦
23+
DO34
50000
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更多BB410MV供應(yīng)商 更新時(shí)間2025-1-14 14:02:00