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BAR1201D

12 AMP PR4 DIODE CELLS

DEC

DIOTEC Electronics Corporation

BF1201

N-channeldual-gatePoLoMOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1201,BF1201RandBF1201WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF1201

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF1201R

N-channeldual-gatePoLoMOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1201,BF1201RandBF1201WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF1201R

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF1201WR

N-channeldual-gatePoLoMOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1201,BF1201RandBF1201WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF1201WR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BMT-1201S

BMT-1201S

DBLECTRODB Lectro Inc

迪貝電子

BMT-1201UX

BMT-1201UX

DBLECTRODB Lectro Inc

迪貝電子

BMT-1201X

BMT-1201X

DBLECTRODB Lectro Inc

迪貝電子

詳細(xì)參數(shù)

  • 型號(hào)：

    BAR1201D

  • 制造商：

    DEC

  • 制造商全稱：

    DEC

  • 功能描述：

    12 AMP PR4 DIODE CELLS

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
BAR12-1
738
738
詢價(jià)
SIEMENS/西門子
23+
6888
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道。可提供大量庫存,詳
 詢價(jià)
RMHO
2023+
16+
8700
原裝現(xiàn)貨
 詢價(jià)
INFINEON
23+
SOT23
63000
原裝正品現(xiàn)貨
 詢價(jià)
INFINEON/英飛凌
25+
SOT-23
9600
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!
 詢價(jià)
INFINEON/英飛凌
23+
SOT-23
50000
原裝正品 支持實(shí)單
 詢價(jià)
INFINEON
23+
SOT23
8000
只做原裝現(xiàn)貨
 詢價(jià)
INFINEON
23+
SOT23
7000
詢價(jià)
HONEYWELL
20+
開關(guān)元件
96
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
霍尼韋爾
22+23+
原封
50
一切實(shí)報(bào)只做原裝正品現(xiàn)貨
 詢價(jià)
更多BAR1201D供應(yīng)商 更新時(shí)間2025-3-10 11:30:00

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