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BA101

BA/BC Series: 1.5 - 6.0 Watts Single and Dual Outputs

FEATURES ?InputπFilter ?FullyRegulatedOutputs ?IndustryStandardPinouts ?5,12,24,28,and48VDCInputs ?RippleandNoiseLessThan50mVpp ?Input/OutputIsolation

ETCList of Unclassifed Manufacturers

未分類制造商

BAS101

High-voltageswitchingdiodes

Generaldescription High-voltageswitchingdiodes,encapsulatedinaSOT23smallSurface-MountedDevice(SMD)plasticpackage. Features ■Highswitchingspeed:trr≤50ns ■Lowcapacitance:Cd≤2pF ■Lowleakagecurrent ■Reversevoltage:VR≤300V ■Repetitivepeakreversevoltage:

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BAS101

High-voltageswitchingdiodes

1.1Generaldescription High-voltageswitchingdiodes,encapsulatedinaSOT23smallSurface-Mounted Device(SMD)plasticpackage. 1.2Features 1.3Applications Table1.Productoverview TypenumberPackageConfiguration NexperiaJEITA BAS101SOT23-single BAS101SSOT23-dualseries H

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BAS101S

High-voltageswitchingdiodes

Generaldescription High-voltageswitchingdiodes,encapsulatedinaSOT23smallSurface-MountedDevice(SMD)plasticpackage. Features ■Highswitchingspeed:trr≤50ns ■Lowcapacitance:Cd≤2pF ■Lowleakagecurrent ■Reversevoltage:VR≤300V ■Repetitivepeakreversevoltage:

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BAS101S

High-voltageswitchingdiodes

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BAS101S

High-voltageswitchingdiodes

1.1Generaldescription High-voltageswitchingdiodes,encapsulatedinaSOT23smallSurface-Mounted Device(SMD)plasticpackage. 1.2Features 1.3Applications Table1.Productoverview TypenumberPackageConfiguration NexperiaJEITA BAS101SOT23-single BAS101SSOT23-dualseries H

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BAV101

Generalpurposediodes

DESCRIPTION TheBAV100toBAV103areswitchingdiodesfabricatedinplanartechnology,andencapsulatedinsmallhermeticallysealedglassSOD80CSMDpackages. FEATURES ?SmallhermeticallysealedglassSMDpackage ?Switchingspeed:max.50ns ?Generalapplication ?Continuou

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BAV101

SiliconEpitaxialPlanarDiodes

Features ?SiliconEpitaxialPlanarDiodes ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications ??Generalpurposes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BAV101

SURFACEMOUNTSWITCHINGDIODE

Features ●Case:MiniMELF,Glass ●Terminals:SolderableperMIL-STD-202,Method208 ●Polarity:CathodeBand ●Marking:CathodeBandOnly ●Weight:0.05grams(approx.) MechanicalData ●FastSwitchingSpeed ●SurfaceMountPackageIdeallySuitedforAutomaticInsertion ●ForGeneralPur

DIODES

Diodes Incorporated

BAV101

UltrafastSwitchingSurfaceMountSi-Rectifiers

SuperfastRecoverySMDRectifierDiodes Features PackagecompatibletoSOD-87 Highpowerdissipation ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Rectificationofhigherfrequencies, Highspeedswitching Commercialgrade1) MechanicalData1)

Diotec

Diotec Semiconductor

BAV101

Ultrafastsiliconrectifierdiodes

ForwardCurrent:0,2A ReverseVoltage:50to300V Features ●Max.soldertemperature:260°C ●PlasticmaterialhasULclassification94V-0 ●Onegreenringdenotescathodeandultrafastswitchingdevice ●Thetypenumbersarenotedonlyonthelableonthereel

SemikronSemikron International

賽米控丹佛斯

BAV101

HIGHVOLTAGESURFACEMOUNTSWITCHINGDIODES

VOLTAGE120to250VoltsPOWER300mWatts FEATURES ?FastswitchingSpeed. ?SurfaceMountPackageIdeallySuitedForAutomaticInsertion. ?SiliconEpitaxalPlanarConstruction. ?IncompliancewithEURoHS2002/95/ECdirectives

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

BAV101

SuperfastSwitchingSurfaceMountSi-Diodes

Diotec

Diotec Semiconductor

BAV101

Ultrafastsiliconrectifierdiodes

SemikronSemikron International

賽米控丹佛斯

BAV101

500mWHermeticallySealedGlassHighVoltageSwitchingDiodes

Features ●?HighVoltageSwitchingDevice ?●MiniMelfpackage ?●Surfacedevicetypemounting ?●Hermeticallysealedglass ?●Compressionbondedconstruction ?●Allexternalsurfacearecorrosionresistantandleadsarereadilysolderable ?●RoHScompliant ?●MatteTin(Sn

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

BAV101

SMALLSIGNALSWITCHINGDIODE

VOLTAGERANGE:50-200V CURRENT:250mA FEATURES ◇Siliconepitaxialplanardiode ◇Highspeedswitchingdiode ◇500mWpowerdissipation MECHANICALDATA ◇Case:MINI-MELF,glasscase ◇Polarity:Colorbanddenotescathode ◇Weight:Approx0.031grams

BILINGalaxy Semi-Conductor Holdings Limited

世紀(jì)微電子常州銀河世紀(jì)微電子股份有限公司

BAV101

SmallSignalSwitchingDiodes,HighVoltage

Features ?SiliconEpitaxialPlanarDiodes ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications ??Generalpurposes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BAV101

HIGHVOLTAGESURFACEMOUNTSWITCHINGDIODES

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

BAV101

SmallSignalDiodes

Features ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ????????MoistureSensitivityLevel1 ?SiliconEpitaxialPlanarDiodes ?Thesediodesarealsoavailableinothercasestylesincluding:theDO-35case withthetypedesi

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

BAV101

SILICONEPITAXIALPLANARDIODES

SILICONEPITAXIALPLANARDIODES HighVoltageGeneralPurposeDiodes

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導(dǎo)體先之科半導(dǎo)體科技(東莞)有限公司

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ELFAB
41
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23+
QFN
20000
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2023+
QFN
80000
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23+
QFN
5000
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23+
QFN
5000
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AMPHENOL/安費(fèi)諾
2420+
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370578
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Amphenol
23+
connector
14671
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F
23+
原廠封裝
5177
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N/A
1992
5000
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UNKNOWN
23+
NA
6486
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更多BA101供應(yīng)商 更新時(shí)間2024-11-1 16:05:00