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B5116ECMDXGJDI中文資料金士頓數(shù)據(jù)手冊PDF規(guī)格書

B5116ECMDXGJDI
廠商型號

B5116ECMDXGJDI

功能描述

Kingston i-Temp DDR3/3L DRAM for embedded applications

文件大小

425.79 Kbytes

頁面數(shù)量

2

生產(chǎn)廠商 Kingston Technology Far East Co. Ltd
企業(yè)簡稱

KINGSTON金士頓

中文名稱

金士頓科技官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-3 19:10:00

B5116ECMDXGJDI規(guī)格書詳情

KEY FEATURES

? Double Data Rate architecture: two data transfers per clock cycle

? High-speed data transfer is realized by 8 bits prefetch pipelined architecture

? Bi-directional differential data strobe (DOS and /DQS) is transmitted/received

with data for capturing data at the receiver

? DOS is edge-aligned with data for READS; center-aligned with data for WRITES

? Differential clock inputs (CK and /CK)

? DLL aligns DQ and DOS transitions with CK transitions

? Commands entered on each positive CK edge; data and data mask referenced

to both edges of DQS

? Data Mask (DM) for write data

? Posted /CAS by programmable additive latency for better command and data

bus efficiency

? On-Die Termination (ODD for better signal quality)

— Synchronous ODT

— Dynamic CDT

— Asynchronous ODT

? Multi-Purpose Register (MPR) for pre-defined pattern read out

? ZQ calibration for DO drive and ODT

? Programmable Partial Array Self-Refresh (PASR)

? RESET pin for power-up sequence and reset function

? SRT range: normal/extended

? Programmable output driver impedance control

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