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B360G

Single Phase 3.0 AMPS. Glass Passivated Bridge Rectifiers

SinglePhase3.0AMPS.GlassPassivatedBridgeRectifiers VoltageRange50to1000VoltsCurrent3.0Amperes Features ULRecognizedFile#E-96005 Glasspassivatedjunction Surgeoverloadrating60amperespeak Lowforwardvoltagedrop Hightemperaturesolderingguaranteed:

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

B360L

SCHOTTKYBARRIERRECTIFIER

DSK

Diode Semiconductor Korea

B360N

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

DSK

Diode Semiconductor Korea

B360Q

3.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

Features GuardRingDieConstructionforTransientProtection IdeallySuitedforAutomatedAssembly LowPowerLoss,HighEfficiency ForUseinLow-Voltage,High-FrequencyInverters,FreeWheeling,andPolarityProtectionApplication Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandA

DIODES

Diodes Incorporated

B360WG-SL

3ASurfaceMountSchottkyBarrierRectifiers

CITCChip Integration Technology Corporation

竹懋科技竹懋科技股份有限公司

B360W-S

3ASurfaceMountSchottkyBarrierRectifiers

CITCChip Integration Technology Corporation

竹懋科技竹懋科技股份有限公司

B360W-ST

3ASurfaceMountSchottkyBarrierRectifiers

CITCChip Integration Technology Corporation

竹懋科技竹懋科技股份有限公司

BD360S

THROUGHHOLESCHOTTKYBARRIERRECTIFIERS

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

BD360T

THROUGHHOLESCHOTTKYBARRIERRECTIFIERS

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

BD360YS

THROUGHHOLESCHOTTKYBARRIERRECTIFIERS

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

BD360YT

THROUGHHOLESCHOTTKYBARRIERRECTIFIERS

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

BFP360

NPNSiliconRFTransistor

NPNSiliconRFTransistor Preliminarydata ?Lowvoltage/lowcurrentoperation ?Forlownoiseamplifiers ?ForOscillatorsupto3.5GHzandPout>10dBm ?Lownoisefigure:1.0dBat1.8GHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP360W

NPNSiliconRFTransistor

NPNSiliconRFTransistor Preliminarydata ?Lowvoltage/lowcurrentoperation ?Forlownoiseamplifiers ?ForOscillatorsupto3.5GHzandPout>10dBm ?Lownoisefigure:1.0dBat1.8GHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR360

NPNSiliconRFTransistor

NPNSiliconRFTransistor Preliminarydata ?Lowvoltage/lowcurrentoperation ?Forlownoiseamplifiers ?ForOscillatorsupto3.5GHzandPout>10dBm ?Lownoisefigure:1.0dBat1.8GHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR360

NPNSiliconRFTransistor

NPNSiliconRFTransistor* ?Lowvoltage/Lowcurrentoperation ?Forlownoiseamplifiers ?ForOscillatorsupto3.5GHzandPout>10dBm ?Lownoisefigure:1.0dBat1.8GHz ?Pb-free(RoHScompliant)package1) ?QualifiedaccordingAECQ101 *Shorttermdescription

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR360

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor ?Lownoiseamplifierforlowcurrentapplications ?Collectordesignsupports5Vsupplyvoltage ?Foroscillatorsupto3.5GHz ?Lownoisefigure1.0dBat1.8GHz ?Pb-free(RoHScompliant)andhalogen-freethinsmall flatpackagewithvisiblel

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR360F

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor ?Lownoiseamplifierforlowcurrentapplications ?Collectordesignsupports5Vsupplyvoltage ?Foroscillatorsupto3.5GHz ?Lownoisefigure1.0dBat1.8GHz ?Pb-free(RoHScompliant)andhalogen-freethinsmall flatpackagewithvisiblel

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR360F

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR360F

Lownoiseamplifierforlowcurrentapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR360T

NPNSiliconRFTransistor

NPNSiliconRFTransistor Preliminarydata ?Lowvoltage/lowcurrentoperation ?Forlownoiseamplifiers ?ForOscillatorsupto3.5GHzandPout>10dBm ?Lownoisefigure:1.0dBat1.8GHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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24+
TO252
22
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NSMC
12588
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2023+
SOT-252
80000
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10000
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ON/安森美
TO-252
22+
6000
十年配單,只做原裝
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ON/安森美
22+
TO-252
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
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ON
24+
TO-252
37650
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DIODES
20+
DO-214ACSMA
36800
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更多B360G供應(yīng)商 更新時(shí)間2025-1-13 13:48:00