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AZ3806

QL(AZ4)MicroLimitSwitch

FEATURES 1.Subminiaturedesign Thesizeoftheactualunitisapproximately 1/10inthecaseoftheplunger modelandapproximately1/6.5inthe caseofthearmmodel,thatofthevertical typelimitswitch. Large-scaleminiaturizationhasbeen achieved.Idealforminiaturizedmachinery

PanasonicPanasonic Semiconductor

松下松下電器

EPA3806GE

MiniatureSurfaceMountTransformer

PCA

PCA ELECTRONICS INC.

IIRFB3806

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IIRFR3806

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFB3806

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFB3806PBF

HEXFETPowerMOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching

IRF

International Rectifier

IRFB3806PBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

IRFR3806

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFR3806

AdvancedProcessTechnology

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3806

N-ChannelMOSFET

Features *VDS(V)=60V *RDS(ON)15.8m(VGS=10V) Benefits *ImprovedGate,AvalancheandDynamic dv/dtRuggedness *FullyCharacterizedCapacitanceand AvalancheSOA *EnhancedbodydiodedV/dtanddI/dt Capability

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

IRFR3806

N-ChannelMOSFET

Features VDS(V)=60V RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRFR3806PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRFR3806PBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

IRFR3806TR

N-ChannelMOSFET

Features *VDS(V)=60V *RDS(ON)15.8m(VGS=10V) Benefits *ImprovedGate,AvalancheandDynamic dv/dtRuggedness *FullyCharacterizedCapacitanceand AvalancheSOA *EnhancedbodydiodedV/dtanddI/dt Capability

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

IRFR3806TR

N-ChannelMOSFET

Features VDS(V)=60V RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRFS3806

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFS3806PBF

HEXFETPowerMOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching

IRF

International Rectifier

IRFS3806PBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

IRFS3806PBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

IRFS3806TRLPBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    AVR3806S/M

  • 制造商:

    Denon Electronics

  • 功能描述:

    SERVICE MANUAL AVR3806

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SOIC-28
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更多AVR3806S/M供應(yīng)商 更新時(shí)間2025-1-6 18:07:00