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AUIRLR120NTRR中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書

AUIRLR120NTRR
廠商型號(hào)

AUIRLR120NTRR

功能描述

HEXFET Power MOSFET

文件大小

271.84 Kbytes

頁(yè)面數(shù)量

12 頁(yè)

生產(chǎn)廠商 International Rectifier
企業(yè)簡(jiǎn)稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-12-25 12:00:00

AUIRLR120NTRR規(guī)格書詳情

AUTOMOTIVE GRADE

Description

Specifically designed for Automotive applications, this cellular design of HEXFET? Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

? Advanced Planar Technology

? Logic-Level Gate Drive

? Low On-Resistance

? Dynamic dV/dT Rating

? 175oC Operating Temperature

? Fast Switching

? Fully Avalanche Rated

? Repetitive Avalanche Allowed up to Tjmax

? Lead-Free, RoHS Compliant

? Automotive Qualified*

產(chǎn)品屬性

  • 型號(hào):

    AUIRLR120NTRR

  • 功能描述:

    MOSFET AUTO 100V 1 N-CH HEXFET 185mOhms

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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Infineon Technologies
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IR
23+
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IR
2022+
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30000
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Infineon/英飛凌
2023+
DPAK
6000
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30000
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Infineon/英飛凌
21+
DPAK
10000
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ir
2023+
TO-252
80000
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IR
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Infineon Technologies
23+
原裝
8000
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