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AUIRFS3806TRR

HEXFETPower MOSFET

IRF

International Rectifier

AZ3806

QL(AZ4)MicroLimitSwitch

FEATURES 1.Subminiaturedesign Thesizeoftheactualunitisapproximately 1/10inthecaseoftheplunger modelandapproximately1/6.5inthe caseofthearmmodel,thatofthevertical typelimitswitch. Large-scaleminiaturizationhasbeen achieved.Idealforminiaturizedmachinery

PanasonicPanasonic Corporation

松下松下電器

EPA3806GE

MiniatureSurfaceMountTransformer

PCA

PCA ELECTRONICS INC.

IIRFB3806

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIRFR3806

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFB3806

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFB3806PBF

HEXFETPowerMOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching

IRF

International Rectifier

IRFB3806PBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

IRFR3806

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR3806

AdvancedProcessTechnology

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3806

N-ChannelMOSFET

Features *VDS(V)=60V *RDS(ON)15.8m(VGS=10V) Benefits *ImprovedGate,AvalancheandDynamic dv/dtRuggedness *FullyCharacterizedCapacitanceand AvalancheSOA *EnhancedbodydiodedV/dtanddI/dt Capability

UMWUMW Rightway Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司(簡稱UMW?)

IRFR3806

N-ChannelMOSFET

Features VDS(V)=60V RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRFR3806PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRFR3806PBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

IRFR3806TR

N-ChannelMOSFET

Features *VDS(V)=60V *RDS(ON)15.8m(VGS=10V) Benefits *ImprovedGate,AvalancheandDynamic dv/dtRuggedness *FullyCharacterizedCapacitanceand AvalancheSOA *EnhancedbodydiodedV/dtanddI/dt Capability

UMWUMW Rightway Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司(簡稱UMW?)

IRFR3806TR

N-ChannelMOSFET

Features VDS(V)=60V RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRFS3806

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFS3806PBF

HEXFETPowerMOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching

IRF

International Rectifier

IRFS3806PBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

IRFS3806PBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

詳細參數(shù)

  • 型號:

    AUIRFS3806TRR

  • 功能描述:

    MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
23+
TO-263
11846
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IR
22+
D2PAK
6000
十年配單,只做原裝
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IR
23+
D2PAK
6000
原裝正品,支持實單
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IR
22+
D2PAK
25000
只做原裝進口現(xiàn)貨,專注配單
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IR
22+
D2PAK
25000
只做原裝進口現(xiàn)貨,專注配單
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IR
23+
D2PAK
8000
只做原裝現(xiàn)貨
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IR
23+
D2PAK
7000
詢價
IR
24+
D2PAK
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
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IR
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
IR
2022
TO-263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
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更多AUIRFS3806TRR供應(yīng)商 更新時間2024-10-25 14:49:00