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AUIRFR4105ZTR

HEXFET? Power MOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

AUIRFR4105ZTRL

HEXFET? Power MOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

AUIRFR4105ZTRL

AUTOMOTIVE GRADE

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AUIRFR4105ZTRR

HEXFET? Power MOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

AUIRFU4105Z

HEXFET?PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

AUIRFU4105Z

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive

KERSEMI

Kersemi Electronic Co., Ltd.

AUIRFU4105Z

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

C4105A

7C227/30TCPVCPVCCOMMUNICATIONCABLE

GENERALGeneral Cable Technologies Corporation

通用電氣公司美國(guó)通用電氣公司

CD4105

ZENERDIODECHIPS

?1N4099THRU1N4135AVAILABLEINJANHCANDJANKCPERMIL-PRF-19500/435 ?ZENERDIODECHIPS ?ALLJUNCTIONSCOMPLETELYPROTECTEDWITHSILICONDIOXIDE ?0.5WATTCAPABILITYWITHPROPERHEATSINKING ?ELECTRICALLYEQUIVALENTTO1N4099THRU1N4135 ?COMPATIBLEWITHALLWIREBONDINGANDDIEATTAC

CDI-DIODE

Compensated Deuices Incorporated

CDLL4105

LEADLESSPACKAGEFORSURFACEMOUNT

?1N4099UR-1THRU1N4135UR-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/435 ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWCURRENTOPERATIONAT250μA ?METALLURGICALLYBONDED ?DOUBLEPLUGCONSTRUCTION

CDI-DIODE

Compensated Deuices Incorporated

CHA4105-QDG

2-4GHzDriver

UMS

United Monolithic Semiconductors

CLL4105

LOWNOISEZENERDIODE6.8VOLTSTHRU47VOLTS500mW,5TOLERANCE

DESCRIPTION: TheCENTRALSEMICONDUCTORCLL4099SeriestypesarehighqualitySiliconZenerDiodesdesignedforlowleakage,lowcurrentandlownoiseapplications.

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

CLL4105

SURFACEMOUNTLOWNOISESILICONZENERDIODES6.8VOLTSTHRU47VOLTS500mW,5TOLERANCE

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

CMHZ4105

SURFACEMOUNTLOWNOISESILICONZENERDIODE6.8VOLTSTHRU47VOLTS500mW

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

CMHZ4105

LOWNOISEZENERDIODE6.8VOLTSTHRU47VOLTS500mW,5TOLERANCE

DESCRIPTION: TheCENTRALSEMICONDUCTORCMHZ4099SeriestypesarehighqualitySiliconZenerDiodesdesignedforlowleakage,lowcurrentandlownoiseapplications.

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

CMHZ4105

SURFACEMOUNTLOWNOISESILICONZENERDIODE

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

CMPZ4105

LOWNOISEZENERDIODE6.8VOLTSTHRU43VOLTS350mW,5TOLERANCE

DESCRIPTION: TheCENTRALSEMICONDUCTORCMPZ4099Seriestypesarehighqualitysiliconzenerdiodesdesignedforlowleakage,lowcurrentandlownoiseapplications. NOTE:Forlowervoltagedevices,seeCMPZ4614Series.

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

CMPZ4105

SURFACEMOUNTLOWNOISESILICONZENERDIODE6.8VOLTSTHRU43VOLTS350mW

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

CMPZ4105

SURFACEMOUNTLOWNOISESILICONZENERDIODE

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

DL4105

500mWSiliconZenerDiodes

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    AUIRFR4105ZTR

  • 功能描述：

    MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
23+
TO-252
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
IR
23+
SOT252
35000
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道。可提供大量庫(kù)存,詳
 詢價(jià)
IR
22+
SOT252
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
SOT252
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
SOT252
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
SOT252
7000
詢價(jià)
IR
19+
TO-252
65140
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
Infineon Technologies
21+
D-Pak
3000
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng))!
 詢價(jià)
Infineon
1931+
N/A
493
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
 詢價(jià)
Infineon(英飛凌)
2117+
DPAK
315000
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
更多AUIRFR4105ZTR供應(yīng)商 更新時(shí)間2024-12-31 14:47:00

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