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BAV302

SwitchingDiode

Features ?SiliconEpitaxialPlanarDiodes ?Savingspace ?Hermeticsealedparts ?FitsontoSOD323/SOT23footprints ?Electricaldataidenticalwiththedevices BAV100...BAV103/BAV200...BAV203 Applications ?Generalpurpose MechanicalData ?Case:MicroMELFGlassCase ?Weigh

Good-Ark

GOOD-ARK Electronics

BAV302

SURFACEMOUNTFASTSWITCHINGDIODE

Features ●Hermeticsealedparts ●Savingspace ●SiliconEpitaxialPlanarDiodes

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

BAV302

SmallSignalSwitchingDiodes,HighVoltage

FEATURES ?Siliconepitaxialplanardiodes ?Savingspace ?Hermeticsealedparts ?FitsontoSOD-323/SOT-23footprints ?Electricaldataidenticalwiththedevices BAV100toBAV103,BAV200toBAV203 ?Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BAV302-TR

SmallSignalSwitchingDiodes,HighVoltage

FEATURES ?Siliconepitaxialplanardiodes ?Savingspace ?Hermeticsealedparts ?FitsontoSOD-323/SOT-23footprints ?Electricaldataidenticalwiththedevices ??BAV100toBAV103,BAV200toBAV203 ?AEC-Q101qualified ?Materialcategorization:Fordefinitionsofcompliancepleasese

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BB302C

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;CMPAK-4(SOT-

HitachiHitachi Semiconductor

日立日立公司

BB302M

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

HitachiHitachi Semiconductor

日立日立公司

BB302M

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB302MBW-TL-E

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BC302

PNPSILICONAFMEDIUMPOWERAMPLIFIERS&SWITCHES

NPNSILICONAFMEDIUMPOWERAMPLIFIERS&SWITCHES

MICRO-ELECTRONICS

Micro Electronics

BC302

SmallSignalTransistors

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    ATP302-TL-H

  • 功能描述：

    MOSFET POWER MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ON/安森美
20+原裝正品
TO252
6000
大量現(xiàn)貨,免費(fèi)發(fā)樣。
 詢價(jià)
ON(安森美)
2023+
ATPAK
4550
全新原裝正品
 詢價(jià)
ON/安森美
23+
ATPAK252
10048
原廠可訂貨,技術(shù)支持,直接渠道?？珊灡９┖贤?/div>
 詢價(jià)
ON/安森美
23+
ATPAK252
14316
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
 詢價(jià)
ON(安森美)
23+
ATPAK
10807
公司只做原裝正品,假一賠十
 詢價(jià)
ON
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
ONSemiconductor
24+
NA
3005
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢價(jià)
ON
23+
TO-252
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
三年內(nèi)
1983
只做原裝正品
 詢價(jià)
ON
2020+
TO252
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
更多ATP302-TL-H供應(yīng)商 更新時(shí)間2025-4-4 11:30:00

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