ATC100B0R8BT500XT

RF Power Field Effect Transistors

N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom1805to 1880MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobe usedinClassABandClassCforPCN--PCS/cellularradioandWLL applications. ?TypicalSingle--Ca

ATC100B0R8BT500XT

N--Channel Enhancement--Mode Lateral MOSFETs

Features ?GreaterNegativeGate--SourceVoltageRangeforImprovedClassC Operation ?DesignedforDigitalPredistortionErrorCorrectionSystems ?OptimizedforDohertyApplications ?InTapeandReel.R3Suffix=250Units,32mmTapeWidth,13--inchReel.

ATC100B100GT500XT

1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features ?Highterminalimpedancesforoptimalbroadbandperformance ?Advancedhighperformancein--packageDoherty ?AbletowithstandextremelyhighoutputVSWRandbroadbandoperating conditions

ATC100B101JT500XT

RF Power Field Effect Transistors

N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom1805to 1880MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobe usedinClassABandClassCforPCN--PCS/cellularradioandWLL applications. ?TypicalSingle--Ca

ATC100B101JT500XT

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500MHz,600W,50VLATERALN--CHANNELBROADBANDRFPOWERMOSFET Designedprimarilyforwidebandapplicationswithfrequenciesupto500MHz.Deviceisunmatchedandissuitableforuseinbroadcastapplications. ?TypicalDVB--TOFDMPerformance:VDD=50Volts,IDQ=2600mA,Pout=125Wa

ATC100B102JT50XT

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500MHz,600W,50VLATERALN--CHANNELBROADBANDRFPOWERMOSFET Designedprimarilyforwidebandapplicationswithfrequenciesupto500MHz.Deviceisunmatchedandissuitableforuseinbroadcastapplications. ?TypicalDVB--TOFDMPerformance:VDD=50Volts,IDQ=2600mA,Pout=125Wa

ATC100B102JT50XT

1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features ?HighTerminalImpedancesforOptimalBroadbandPerformance ?DesignedforDigitalPredistortionErrorCorrectionSystems ?OptimizedforDohertyApplications

ATC100B102JT50XT

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedprimarilyforCWlarge-signaloutputanddriverapplicationswithfrequenciesupto600MHz.Devicesareunmatchedandaresuitableforuseinindustrial,medicalandscientificapplications.

ATC100B104JT500XT

RF Power Field Effect Transistors

N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom1805to 1880MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobe usedinClassABandClassCforPCN--PCS/cellularradioandWLL applications. ?TypicalSingle--Ca

ATC100B110JT500XT

N--Channel Enhancement--Mode Lateral MOSFETs

Features ?GreaterNegativeGate--SourceVoltageRangeforImprovedClassC Operation ?DesignedforDigitalPredistortionErrorCorrectionSystems ?OptimizedforDohertyApplications ?InTapeandReel.R3Suffix=250Units,32mmTapeWidth,13--inchReel.