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AT28C256E-20DM/883

256K 32K x 8 Paged CMOS E2PROM

Description TheAT28C256isahigh-performanceelectricallyerasableandprogrammablereadonlymemory.Its256Kofmemoryisorganizedas32,768wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto150nswithpowerdissipationofjus

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C256E-20DM/883

256K (32K x 8) Paged Parallel EEPROM

Description TheAT28C256isahigh-performanceelectricallyerasableandprogrammablereadonlymemory.Its256Kofmemoryisorganizedas32,768wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto150nswithpowerdissipationofjus

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C256E-20JC

256K32Kx8PagedCMOSE2PROM

Description TheAT28C256isahigh-performanceelectricallyerasableandprogrammablereadonlymemory.Its256Kofmemoryisorganizedas32,768wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto150nswithpowerdissipationofjus

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C256E-20JI

256K32Kx8PagedCMOSE2PROM

Description TheAT28C256isahigh-performanceelectricallyerasableandprogrammablereadonlymemory.Its256Kofmemoryisorganizedas32,768wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto150nswithpowerdissipationofjus

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C256E-20PC

256K32Kx8PagedCMOSE2PROM

Description TheAT28C256isahigh-performanceelectricallyerasableandprogrammablereadonlymemory.Its256Kofmemoryisorganizedas32,768wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto150nswithpowerdissipationofjus

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C256E-20PI

256K32Kx8PagedCMOSE2PROM

Description TheAT28C256isahigh-performanceelectricallyerasableandprogrammablereadonlymemory.Its256Kofmemoryisorganizedas32,768wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto150nswithpowerdissipationofjus

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C256E-20SC

256K32Kx8PagedCMOSE2PROM

Description TheAT28C256isahigh-performanceelectricallyerasableandprogrammablereadonlymemory.Its256Kofmemoryisorganizedas32,768wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto150nswithpowerdissipationofjus

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C256E-20SI

256K32Kx8PagedCMOSE2PROM

Description TheAT28C256isahigh-performanceelectricallyerasableandprogrammablereadonlymemory.Its256Kofmemoryisorganizedas32,768wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto150nswithpowerdissipationofjus

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C256E-20TC

256K32Kx8PagedCMOSE2PROM

Description TheAT28C256isahigh-performanceelectricallyerasableandprogrammablereadonlymemory.Its256Kofmemoryisorganizedas32,768wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto150nswithpowerdissipationofjus

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C256E-20TI

256K32Kx8PagedCMOSE2PROM

Description TheAT28C256isahigh-performanceelectricallyerasableandprogrammablereadonlymemory.Its256Kofmemoryisorganizedas32,768wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto150nswithpowerdissipationofjus

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

詳細參數(shù)

  • 型號:

    AT28C256E-20DM

  • 功能描述:

    電可擦除可編程只讀存儲器 256K HI-ENDURANCE SDP - 200NS

  • RoHS:

  • 制造商:

    Atmel

  • 存儲容量:

    2 Kbit

  • 組織:

    256 B x 8

  • 數(shù)據(jù)保留:

    100 yr

  • 最大時鐘頻率:

    1000 KHz

  • 最大工作電流:

    6 uA

  • 工作電源電壓:

    1.7 V to 5.5 V

  • 最大工作溫度:

    + 85 C

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    SOIC-8

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1913
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532
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21+
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8080
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ATMEL
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6980
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ATMEL
2020+
N/A
5
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6423
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19960
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更多AT28C256E-20DM供應(yīng)商 更新時間2025-1-23 14:16:00