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AT-42086-TR2G中文資料安華高數(shù)據(jù)手冊PDF規(guī)格書

AT-42086-TR2G
廠商型號

AT-42086-TR2G

參數(shù)屬性

AT-42086-TR2G 封裝/外殼為SOT-86;包裝為散裝;類別為分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極(BJT)- 射頻;產(chǎn)品描述:RF TRANS NPN 12V 8GHZ 86 PLASTIC

功能描述

Up to 6 GHz Medium Power Silicon Bipolar Transistor

文件大小

67.73 Kbytes

頁面數(shù)量

5

生產(chǎn)廠商 AVAGO TECHNOLOGIES LIMITED
企業(yè)簡稱

AVAGO安華高

中文名稱

安華高官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-11-15 17:29:00

AT-42086-TR2G規(guī)格書詳情

Description

Avago’s AT-42086 is a general purpose NPN bipolar transistor that o?ers excellent high frequency performance. The AT-42086 is housed in a low cost surface mount .085 diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many di?erent functions. The 20 emitter fnger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. Applications include use in wireless systems as an LNA, gain stage, bu?er, oscillator, and mixer. An optimum noise match near 50? up to 1 GHz, makes this device easy to use as a low noise amplifer.

The AT-42086 bipolar transistor is fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of this device.

Features

? High Output Power:

20.5 dBm Typical P1 dB at 2.0 GHz

? High Gain at 1 dB Compression:

13.5 dB Typical G1 dB at 2.0 GHz

? Low Noise Figure:

1.9 dB Typical NFO at 2.0 GHz

? High Gain-Bandwidth Product: 8.0 GHz Typical fT

? Surface Mount Plastic Package

? Tape-and-Reel Packaging Option Available

? Lead-free Option Available

產(chǎn)品屬性

  • 產(chǎn)品編號:

    AT-42086-TR2G

  • 制造商:

    Broadcom Limited

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極(BJT)- 射頻

  • 包裝:

    散裝

  • 晶體管類型:

    NPN

  • 電壓 - 集射極擊穿(最大值):

    12V

  • 頻率 - 躍遷:

    8GHz

  • 噪聲系數(shù)(dB,不同 f 時的典型值):

    1.9dB ~ 3.5dB @ 2GHz ~ 4GHz

  • 增益:

    9dB ~ 13dB

  • 功率 - 最大值:

    500mW

  • 不同?Ic、Vce?時 DC 電流增益 (hFE)(最小值):

    30 @ 35mA,8V

  • 電流 - 集電極 (Ic)(最大值):

    80mA

  • 工作溫度:

    150°C(TJ)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    SOT-86

  • 供應(yīng)商器件封裝:

    86 塑料

  • 描述:

    RF TRANS NPN 12V 8GHZ 86 PLASTIC

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