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AT-31011-TR1分立半導(dǎo)體產(chǎn)品的晶體管-雙極(BJT)-射頻規(guī)格書(shū)PDF中文資料
廠商型號(hào) |
AT-31011-TR1 |
參數(shù)屬性 | AT-31011-TR1 封裝/外殼為TO-253-4,TO-253AA;包裝為散裝;類別為分立半導(dǎo)體產(chǎn)品的晶體管-雙極(BJT)-射頻;產(chǎn)品描述:RF TRANS NPN 5.5V SOT143 |
功能描述 | Low Current, High Performance NPN Silicon Bipolar Transistor |
文件大小 |
137.49 Kbytes |
頁(yè)面數(shù)量 |
10 頁(yè) |
生產(chǎn)廠商 | Agilent(Hewlett-Packard) |
企業(yè)簡(jiǎn)稱 |
HP【安捷倫科技】 |
中文名稱 | 安捷倫科技有限公司官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-1-3 22:21:00 |
AT-31011-TR1規(guī)格書(shū)詳情
Description
Hewlett-Packard’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in battery powered applications in wireless markets. The AT-31033 uses the 3 lead SOT-23, while the AT-31011 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standards compatible with high volume surface mount assembly techniques.
The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 10 emitter finger interdigitated geometry yields an extremely fast transistor with low operating currents and reasonable impedances.
Optimized performance at 2.7 V makes these devices ideal for use in 900 MHz, 1.9 GHz, and 2.4 GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Applications include cellular and PCS handsets as well as Industrial-Scientific-Medical systems. Typical amplifier designs at 900 MHz yield 1.3 dB noise figures with 11 dB or more associated gain at a 2.7 V, 1 mA bias. Moderate output power capability (+9 dBm P1dB) coupled with an excellent noise figure yields high dynamic range for a microcurrent device. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications.
The AT-3 series bipolar transistors are fabricated using an optimized version of Hewlett-Packard’s 10 GHz fT, 30 GHz fmax Self- Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self- alignment techniques, and gold metalization in the fabrication of these devices.
Features
? High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation
? 900 MHz Performance:
AT-31011: 0.9 dB NF, 13 dB GA
AT-31033: 0.9 dB NF, 11 dB GA
? Characterized for End-Of Life Battery Use (2.7 V)
? SOT-143 SMT Plastic Package
? Tape-And-Reel Packaging Option Available[1]
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
AT-31011-TR1G
- 制造商:
Broadcom Limited
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極(BJT)- 射頻
- 包裝:
散裝
- 晶體管類型:
NPN
- 電壓 - 集射極擊穿(最大值):
5.5V
- 噪聲系數(shù)(dB,不同 f 時(shí)的典型值):
0.9dB ~ 1.2dB @ 900MHz
- 增益:
11dB ~ 13dB
- 功率 - 最大值:
150mW
- 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)(最小值):
70 @ 1mA,2.7V
- 電流 - 集電極 (Ic)(最大值):
16mA
- 工作溫度:
150°C(TJ)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
TO-253-4,TO-253AA
- 供應(yīng)商器件封裝:
SOT-143
- 描述:
RF TRANS NPN 5.5V SOT143
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
AVAGO/安華高 |
23+ |
SOT-23 |
54258 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)! |
詢價(jià) | ||
AVAGO |
18+ |
SOT-143 |
24657 |
全新原裝現(xiàn)貨,可出樣品,可開(kāi)增值稅發(fā)票 |
詢價(jià) | ||
AVAGO/安華高 |
2223+ |
SOT-143 |
26800 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn) |
詢價(jià) | ||
AVAGO/安華高 |
23+ |
NA/ |
2065 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票 |
詢價(jià) | ||
AVAGO |
1742+ |
SOT23 |
98215 |
只要網(wǎng)上有絕對(duì)有貨!只做原裝正品! |
詢價(jià) | ||
AVAGO |
2023+ |
SOT-143 |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
AVAGO |
SOT143 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
AVAGO |
23+ |
SOT-143 |
7750 |
全新原裝優(yōu)勢(shì) |
詢價(jià) | ||
AVAGO |
20+ |
SOT23 |
49000 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
HEWLETT |
24+ |
35200 |
一級(jí)代理/放心采購(gòu) |
詢價(jià) |