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ASITPV591

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASITPV591isaCommonEmitterDeviceDesignedforHighLinearityClassATelevisionBandIVandVTransmitters. FEATURESINCLUDE: ?GoldMetalization ?EmitterBallasting

ASI

Advanced Semiconductor

BA591

Band-switchingdiode

DESCRIPTION TheBA591isaplanar,highperformanceband-switchingdiodeintheverysmallSOD323SMDplasticpackage. FEATURES ?VerysmallplasticSMDpackage ?Lowdiodecapacitance:max.1.05pF ?Lowdiodeforwardresistance:max.0.7? ?Smallinductance. APPLICATIONS ?Lowlossband

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BA591

Band-switchingdiode

Features ●VerysmallplasticSMDpackage ●Lowdiodecapacitance:max.1.05pF ●Lowdiodeforwardresistance:max.0.7Ω ●Smallinductance.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

BA591

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BA591WS

BANDSWITCHINGDIODE

Features ?VerysmallplasticSMDpackage ?Lowdiodecapacitance ?Lowdiodeforwardresistance ?Smallinductance

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導(dǎo)體先之科半導(dǎo)體科技（東莞）有限公司

BF591

NPNhigh-voltagetransistors

DESCRIPTION NPNhigh-voltagetransistorinaTO-202;SOT128Bplasticpackage. FEATURES ?Lowcurrent(max.150mA) ?Highvoltage(max.210V). APPLICATIONS ?Telephonesystems.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG591

NPN7GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorinaplastic,4-pinSOT223package. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS IntendedforapplicationsintheGHzrange

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG591

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFQ591

NPN7GHzwidebandtransistor

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFQ591

NPN7GHzwidebandtransistor

DESCRIPTION NPNwidebandtransistorinaSOT89plasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS IntendedforapplicationsintheGHzrangesuchasMATV orCATVamplifiersandR

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFQ591

iscSiliconNPNRFTransistor

DESCRIPTION ?HighPowerGain ?HighCurrentGainBandwidthProduct ?LowNoiseFigure APPLICATIONS ?DesignedforuseinMATVorCATVamplifiersandRF communicationssubscribersequipment.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BFQ591

SiliconNPNRFTransistor

DESCRIPTION ?HighPowerGain ?HighCurrentGainBandwidthProduct ?LowNoiseFigure APPLICATIONS ?DesignedforuseinMATVorCATVamplifiersandRF communicationssubscribersequipment.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BFQ591

NPN7GHzwidebandtransistor

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFQ591

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C591

250WATTS(AC)DC/DCSINGLEOUTPUT

250WATTS(AC)DC/DCSINGLEOUTPUT Features ?SingleOutput ?3Ux21(24)TEx166.5mm(24TEfor5Voutputs) ?Weight1.7kg

POWERBOX

Powerbox manufactures

CL-591S

LEDForFlashLightSource

LEDForFlashLightSource ●Highoutputtypewithreflectorequipped.

CITIZENCitizen Electronics Co., Ltd

西鐵城電子株式會(huì)社

CMLT591E

PNPLowVCE(Sat)1.0Amptransistor

DESCRIPTION: TheCENTRALSEMICONDUCTORCMLT591EisaPNPLowVCE(SAT)1.0Amptransistor,epoxymoldedinaspacesavingSOT-563surfacemountpackageanddesignedforapplicationsrequiringahighcurrentcapabilityandlowsaturationvoltages. MARKINGCODE:L59

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

CMMT591

SILICONPLANAREPITAXIALTRANSISTORS

SILICONPLANAREPITAXIALTRANSISTORS PNPtransistor

CDIL

Continental Device India Limited

CMMT591

SOT-23-PowerTransistorandDarlingtons

RECTRON

Rectron Semiconductor

CMMT591A

PNPEPITAXIALPLANARSILICONTRANSISTOR

PNPEPITAXIALPLANARSILICONTRANSISTOR ComplementaryCMMT491A

CDIL

Continental Device India Limited

詳細(xì)參數(shù)

  • 型號(hào)：

    ASITPV591

  • 制造商：

    ASI

  • 制造商全稱(chēng)：

    ASI

  • 功能描述：

    NPN SILICON RF POWER TRANSISTOR

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ASI
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
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FORE
22+
QFP
8200
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23+
QFP
16567
正品:QQ;2987726803
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ASIX
22+
QFN40
8900
全新正品現(xiàn)貨 有掛就有現(xiàn)貨
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ASCOMM
2016+
COG
2500
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
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ASCOMM
1844+
COG
6852
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ASCOMM
23+
COG
50000
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ASCOMM
COG
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
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ASCOMM
09+
COG
1000
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ASCOMM
23+
COG
3500
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更多ASITPV591供應(yīng)商 更新時(shí)間2024-12-25 15:00:00

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