AS7C31026B-20JIN中文資料ALSC數(shù)據(jù)手冊(cè)PDF規(guī)格書

Functional description

The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.

Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5, 6, 7, 8 ns are ideal for high-performance applications.

Features

? Industrial and commercial versions

? Organization: 65,536 words × 16 bits

? Center power and ground pins for low noise

? High speed

- 10/12/15/20 ns address access time

- 5, 6, 7, 8 ns output enable access time

? Low power consumption: ACTIVE

- 288 mW / max @ 10 ns

? Low power consumption: STANDBY

- 18 mW / max CMOS I/O

? 6 T 0.18 u CMOS technology

? Easy memory expansion with CE, OE inputs

? TTL-compatible, three-state I/O

? JEDEC standard packaging

- 44-pin 400 mil SOJ

- 44-pin TSOP 2-400

? ESD protection ≥ 2000 volts

? Latch-up current ≥ 200 mA