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AS4LC2M8S1

3.3V 2M x 8/1M x 16 CMOS synchronous DRAM

Functionaldescription TheAS4LC2M8S1andAS4LC1M16S1arehigh-performance16-megabitCMOSSynchronousDynamicRandomAccessMemory(SDRAM)devicesorganizedas1,048,576words×8bits×2banks(2048rows×512columns)and524,288words×16bits×2banks(2048rows×256columns),respective

ALSC

Alliance Semiconductor Corporation

AS4LC2M8S1

3.3V 2M ? 8/1M ? 16 CMOS synchronous DRAM

Features ?Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress ?Allsignalsreferencedtopositiveedgeofclock,fullysynchronous ?DualinternalbankscontrolledbyA11(banksel

ALSC

Alliance Semiconductor Corporation

AS4LC2M8S1-10TC

3.3V 2M x 8/1M x 16 CMOS synchronous DRAM

Functionaldescription TheAS4LC2M8S1andAS4LC1M16S1arehigh-performance16-megabitCMOSSynchronousDynamicRandomAccessMemory(SDRAM)devicesorganizedas1,048,576words×8bits×2banks(2048rows×512columns)and524,288words×16bits×2banks(2048rows×256columns),respective

ALSC

Alliance Semiconductor Corporation

AS4LC2M8S1-10TC

3.3V 2M ? 8/1M ? 16 CMOS synchronous DRAM

Features ?Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress ?Allsignalsreferencedtopositiveedgeofclock,fullysynchronous ?DualinternalbankscontrolledbyA11(banksel

ALSC

Alliance Semiconductor Corporation

AS4LC2M8S1-12TC

3.3V 2M x 8/1M x 16 CMOS synchronous DRAM

Functionaldescription TheAS4LC2M8S1andAS4LC1M16S1arehigh-performance16-megabitCMOSSynchronousDynamicRandomAccessMemory(SDRAM)devicesorganizedas1,048,576words×8bits×2banks(2048rows×512columns)and524,288words×16bits×2banks(2048rows×256columns),respective

ALSC

Alliance Semiconductor Corporation

AS4LC2M8S1-7TC

3.3V 2M ? 8/1M ? 16 CMOS synchronous DRAM

Features ?Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress ?Allsignalsreferencedtopositiveedgeofclock,fullysynchronous ?DualinternalbankscontrolledbyA11(banksel

ALSC

Alliance Semiconductor Corporation

AS4LC2M8S1-8TC

3.3V 2M x 8/1M x 16 CMOS synchronous DRAM

Functionaldescription TheAS4LC2M8S1andAS4LC1M16S1arehigh-performance16-megabitCMOSSynchronousDynamicRandomAccessMemory(SDRAM)devicesorganizedas1,048,576words×8bits×2banks(2048rows×512columns)and524,288words×16bits×2banks(2048rows×256columns),respective

ALSC

Alliance Semiconductor Corporation

AS4LC2M8S1-8TC

3.3V 2M ? 8/1M ? 16 CMOS synchronous DRAM

Features ?Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress ?Allsignalsreferencedtopositiveedgeofclock,fullysynchronous ?DualinternalbankscontrolledbyA11(banksel

ALSC

Alliance Semiconductor Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    AS4LC2M8S1

  • 制造商：

    ALSC

  • 制造商全稱：

    Alliance Semiconductor Corporation

  • 功能描述：

    3.3V 2M × 8/1M × 16 CMOS synchronous DRAM

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ALSC
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
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ALLIANCE
23+
TSOP-44
5177
現(xiàn)貨
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ALLIANCE
2023+
TSOP-44
50000
原裝現(xiàn)貨
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ASI
23+
SOJ24
5000
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
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ALLINCE
22+
TSOP-44
8200
原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢!!
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ALLINCE
23+
TSOP-44
98000
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ALLANCE
2016+
SOJ
2500
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
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ASI
2020+
SOJ24
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
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ASI
21+
SOJ24
16
原裝現(xiàn)貨假一賠十
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ASI
SOJ24
16
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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更多AS4LC2M8S1供應(yīng)商 更新時(shí)間2024-11-2 8:02:00

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