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AS4C4M4

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT

GENERALDESCRIPTION TheAustinSemiconductor,Inc.AS4C4M4DGisa4,194,304x4bitFastPageModeCMOSDRAMofferinghighspeedrandomaccessofmemorycellswithinthesamerow.Thisdevicefeaturesa+5V(±10)powersupply,refreshcycle(2K),andfastaccesstimes(60and70ns).Otherfeature

AUSTIN

Austin Semiconductor

AS4C4M4DG-6/IT

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT

GENERALDESCRIPTION TheAustinSemiconductor,Inc.AS4C4M4DGisa4,194,304x4bitFastPageModeCMOSDRAMofferinghighspeedrandomaccessofmemorycellswithinthesamerow.Thisdevicefeaturesa+5V(±10)powersupply,refreshcycle(2K),andfastaccesstimes(60and70ns).Otherfeature

AUSTIN

Austin Semiconductor

AS4C4M4DG-6/XT

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT

GENERALDESCRIPTION TheAustinSemiconductor,Inc.AS4C4M4DGisa4,194,304x4bitFastPageModeCMOSDRAMofferinghighspeedrandomaccessofmemorycellswithinthesamerow.Thisdevicefeaturesa+5V(±10)powersupply,refreshcycle(2K),andfastaccesstimes(60and70ns).Otherfeature

AUSTIN

Austin Semiconductor

AS4C4M4DG-7/IT

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT

GENERALDESCRIPTION TheAustinSemiconductor,Inc.AS4C4M4DGisa4,194,304x4bitFastPageModeCMOSDRAMofferinghighspeedrandomaccessofmemorycellswithinthesamerow.Thisdevicefeaturesa+5V(±10)powersupply,refreshcycle(2K),andfastaccesstimes(60and70ns).Otherfeature

AUSTIN

Austin Semiconductor

AS4C4M4DG-7/XT

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT

GENERALDESCRIPTION TheAustinSemiconductor,Inc.AS4C4M4DGisa4,194,304x4bitFastPageModeCMOSDRAMofferinghighspeedrandomaccessofmemorycellswithinthesamerow.Thisdevicefeaturesa+5V(±10)powersupply,refreshcycle(2K),andfastaccesstimes(60and70ns).Otherfeature

AUSTIN

Austin Semiconductor

AS4C4M4F0

5V 4M?4 CMOS DRAM (Fast Page mode)

Functionaldescription TheAS4C4M4F0andAS4C4M4F1arehighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)devicesorganizedas4,194,304words×4bits.ThedevicesarefabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremely

ALSC

Alliance Semiconductor Corporation

AS4C4M4F0-50

5V 4M?4 CMOS DRAM (Fast Page mode)

Functionaldescription TheAS4C4M4F0andAS4C4M4F1arehighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)devicesorganizedas4,194,304words×4bits.ThedevicesarefabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremely

ALSC

Alliance Semiconductor Corporation

AS4C4M4F0-50JC

5V 4M?4 CMOS DRAM (Fast Page mode)

Functionaldescription TheAS4C4M4F0andAS4C4M4F1arehighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)devicesorganizedas4,194,304words×4bits.ThedevicesarefabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremely

ALSC

Alliance Semiconductor Corporation

AS4C4M4F0-50JI

5V 4M?4 CMOS DRAM (Fast Page mode)

Functionaldescription TheAS4C4M4F0andAS4C4M4F1arehighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)devicesorganizedas4,194,304words×4bits.ThedevicesarefabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremely

ALSC

Alliance Semiconductor Corporation

AS4C4M4F0-50TC

5V 4M?4 CMOS DRAM (Fast Page mode)

Functionaldescription TheAS4C4M4F0andAS4C4M4F1arehighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)devicesorganizedas4,194,304words×4bits.ThedevicesarefabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremely

ALSC

Alliance Semiconductor Corporation

AS4C4M4F0-50TI

5V 4M?4 CMOS DRAM (Fast Page mode)

Functionaldescription TheAS4C4M4F0andAS4C4M4F1arehighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)devicesorganizedas4,194,304words×4bits.ThedevicesarefabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremely

ALSC

Alliance Semiconductor Corporation

AS4C4M4F0-60

5V 4M?4 CMOS DRAM (Fast Page mode)

Functionaldescription TheAS4C4M4F0andAS4C4M4F1arehighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)devicesorganizedas4,194,304words×4bits.ThedevicesarefabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremely

ALSC

Alliance Semiconductor Corporation

AS4C4M4F0-60JC

5V 4M?4 CMOS DRAM (Fast Page mode)

Functionaldescription TheAS4C4M4F0andAS4C4M4F1arehighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)devicesorganizedas4,194,304words×4bits.ThedevicesarefabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremely

ALSC

Alliance Semiconductor Corporation

AS4C4M4F0-60JI

5V 4M?4 CMOS DRAM (Fast Page mode)

Functionaldescription TheAS4C4M4F0andAS4C4M4F1arehighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)devicesorganizedas4,194,304words×4bits.ThedevicesarefabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremely

ALSC

Alliance Semiconductor Corporation

AS4C4M4F0-60TC

5V 4M?4 CMOS DRAM (Fast Page mode)

Functionaldescription TheAS4C4M4F0andAS4C4M4F1arehighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)devicesorganizedas4,194,304words×4bits.ThedevicesarefabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremely

ALSC

Alliance Semiconductor Corporation

AS4C4M4F0-60TI

5V 4M?4 CMOS DRAM (Fast Page mode)

Functionaldescription TheAS4C4M4F0andAS4C4M4F1arehighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)devicesorganizedas4,194,304words×4bits.ThedevicesarefabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremely

ALSC

Alliance Semiconductor Corporation

AS4C4M4F1

5V 4M?4 CMOS DRAM (Fast Page mode)

Functionaldescription TheAS4C4M4F0andAS4C4M4F1arehighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)devicesorganizedas4,194,304words×4bits.ThedevicesarefabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremely

ALSC

Alliance Semiconductor Corporation

AS4C4M4F1-50

5V 4M?4 CMOS DRAM (Fast Page mode)

Functionaldescription TheAS4C4M4F0andAS4C4M4F1arehighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)devicesorganizedas4,194,304words×4bits.ThedevicesarefabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremely

ALSC

Alliance Semiconductor Corporation

AS4C4M4F1-50JC

5V 4M?4 CMOS DRAM (Fast Page mode)

Functionaldescription TheAS4C4M4F0andAS4C4M4F1arehighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)devicesorganizedas4,194,304words×4bits.ThedevicesarefabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremely

ALSC

Alliance Semiconductor Corporation

AS4C4M4F1-50JI

5V 4M?4 CMOS DRAM (Fast Page mode)

Functionaldescription TheAS4C4M4F0andAS4C4M4F1arehighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)devicesorganizedas4,194,304words×4bits.ThedevicesarefabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremely

ALSC

Alliance Semiconductor Corporation

詳細(xì)參數(shù)

  • 型號(hào):

    AS4C4M4

  • 功能描述:

    16384Kbits 4M x 4 Replacement with DSCC 5962-n/a | DRAM

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
24+
SOJ
37
詢價(jià)
ALLIANCE
2339+
SOJ
5650
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫存!
詢價(jià)
ALIANCE
22+
原廠原封
8200
原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢(shì)!!
詢價(jià)
ALLIANCE
22+
SOJ
2987
只售原裝自家現(xiàn)貨!誠信經(jīng)營(yíng)!歡迎來電!
詢價(jià)
AllianceMemory
23+
NA
396
專做原裝正品,假一罰百!
詢價(jià)
ALLIANCE
22+23+
SOJ
38996
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
ALLIANCE
1824+
SOJ-26
3100
原裝現(xiàn)貨專業(yè)代理,可以代拷程序
詢價(jià)
ALLIANCE
03+
SOJ
600
庫存剛更新加微13425146986
詢價(jià)
ALLIANCE
新年份
SOJ
3500
絕對(duì)全新原裝現(xiàn)貨,歡迎來電查詢
詢價(jià)
AllianceMemoryInc
2022+
160
全新原裝 貨期兩周
詢價(jià)
更多AS4C4M4供應(yīng)商 更新時(shí)間2024-11-12 16:30:00